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Method of manufacturing semiconductor device, acid etching resistance material and copolymer

  • US 7,714,316 B2
  • Filed: 05/13/2008
  • Issued: 05/11/2010
  • Est. Priority Date: 03/31/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface;

  • a first electrode;

    a light emitting layer formed above the semiconductor substrate having the roughened side surface; and

    a second electrode;

    the semiconductor device being manufactured by a method comprising;

    forming a protective film on a part of surfaces of the semiconductor device, the semiconductor device having an side exposed surface, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1);

    embedded image wherein in the general formula (1), R1 is a hydrogen atom or methyl group;

    R3 is a cyclic group selected from an alicyclic group and an aromatic group;

    R4 is a polar group; and

    R2 is a group represented by the following general formula (2);

    embedded image wherein in the general formula (2), R5 is a hydrogen atom or methyl group;

    immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and

    removing the protective film.

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