Method of manufacturing semiconductor device, acid etching resistance material and copolymer
First Claim
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1. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface;
- a first electrode;
a light emitting layer formed above the semiconductor substrate having the roughened side surface; and
a second electrode;
the semiconductor device being manufactured by a method comprising;
forming a protective film on a part of surfaces of the semiconductor device, the semiconductor device having an side exposed surface, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1);
wherein in the general formula (1), R1 is a hydrogen atom or methyl group;
R3 is a cyclic group selected from an alicyclic group and an aromatic group;
R4 is a polar group; and
R2 is a group represented by the following general formula (2);
wherein in the general formula (2), R5 is a hydrogen atom or methyl group;
immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and
removing the protective film.
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Abstract
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):
-
- (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1):
-
- (in the general formula (2), R5 is a hydrogen atom or methyl group).
23 Citations
19 Claims
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1. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface;
- a first electrode;
a light emitting layer formed above the semiconductor substrate having the roughened side surface; and
a second electrode;
the semiconductor device being manufactured by a method comprising;
forming a protective film on a part of surfaces of the semiconductor device, the semiconductor device having an side exposed surface, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1);wherein in the general formula (1), R1 is a hydrogen atom or methyl group;
R3 is a cyclic group selected from an alicyclic group and an aromatic group;
R4 is a polar group; and
R2 is a group represented by the following general formula (2);wherein in the general formula (2), R5 is a hydrogen atom or methyl group;
immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and
removing the protective film.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
wherein in the general formula (1′
), R1 is a hydrogen atom or methyl group;
R3′
is a cyclic group;
R4 is a polar group.
- a first electrode;
-
13. The semiconductor device according to claim 12, wherein R3′
- in the general formula (1′
) is an alicyclic group.
- in the general formula (1′
-
14. The semiconductor device according to claim 13, wherein the alicyclic group is selected from adamantane, norbornane, and cyclohexane ring.
-
15. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface;
- a first electrode;
a light emitting layer formed above the semiconductor substrate having the roughened side surface; and
a second electrode;
the semiconductor device being manufactured by a method comprising;
forming a lower protective film above a part of surfaces of the semiconductor device using a first solution containing a first solvent and an acid etching resistance material, the semiconductor device having an exposed side surface, the lower protective film being insoluble to a second solvent, the acid etching resistance material having a repeating unit represented by the following general formula (1);wherein in the general formula (1), R1 is a hydrogen atom or methyl group;
R3 is a cyclic group selected from an alicyclic group and an aromatic group;
R4 is a polar group; and
R2 is a group represented by the following general formula (2);wherein in the general formula (2), R5 is a hydrogen atom or methyl group;
forming an upper protective film using a second solution containing the second solvent on the lower protective film, thereby obtaining a protective film formed of a laminated structure comprising the lower protective film and the upper protective film;
immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and
removing the protective film.- View Dependent Claims (16, 17, 18, 19)
wherein in the general formula (1′
), R1 is a hydrogen atom or methyl group;
R3′
is a cyclic group;
R4 is a polar group.
- a first electrode;
Specification