Multiband output impedance matching circuit having passive devices, amplifier including multiband input impedance matching circuit having passive devices, and amplifier including multiband input/output impedance matching circuit having passive devices

• US 7,714,662 B2
• Filed: 09/18/2008
• Issued: 05/11/2010
• Est. Priority Date: 09/28/2007
• Status: Expired due to Fees

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: ICU Research and Industrial Cooperation Group, Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Kwang Du, Jeong, Moon Suk, Kim, Jeong Hoon, Kim, Nam Heung
• Primary Examiner(s): Nguyen; Khanh V
• Application Number:
  US12/233,352
• Publication Number:
  US 20090085670A1
• Time in Patent Office: 600 Days
• Field of Search: 330/126, 330/277, 330/302, 330/311
• US Class Current: 330/302
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 1/565 using inductive elements
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/492 A coil being added in the source circuit of a transistor amplifier stage as degenerating element
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03H 11/28 Impedance matching networks

Abstract

Disclosed are a multiband output impedance matching circuit having passive devices, an amplifier including a multiband input impedance matching circuit having passive devices, and an amplifier including a multiband input/output impedance matching circuit having passive devices, which can be miniaturized without a separate output terminal buffer and reduce current consumption by using the passive devices.

Claims

1. A multiband output impedance matching circuit having passive devices, the multiband output impedance matching circuit comprising:

first and second inductors connected in series to each other between a radio frequency (RF) signal input terminal and a driving power terminal supplying preset driving power; and

a first capacitor connected in series between an RF signal output terminal and a node between the first and second inductors,

wherein the multiband output impedance matching circuit matches impedance with the RF signal output terminal, a first output frequency band is set according to resonance of inductance of the first inductor and capacitance of the first capacitor, and a second output frequency band which is higher than the first output frequency band is set according to resonance of combined inductance of the first and second inductors and capacitance of the first capacitor.

2. An amplifier including a multiband input impedance matching circuit having passive devices, the amplifier comprising:

a cascode amplification unit amplifying an impedance-matched radio frequency (RF) input signal; and

an input impedance matching circuit connected in series between an RF signal input terminal and the cascode amplification unit and matching impedance with the RF signal input terminal,

wherein the cascode amplification unit comprises a first transistor connected to an output terminal of the input impedance matching circuit, and a second transistor cascode-connected to the first transistor, the cascode amplification unit amplifying an RF signal from the input impedance matching circuit,

the input impedance matching circuit comprises a first capacitor connected in series to the RF signal input terminal, a first inductor connected in parallel to an output terminal of the first capacitor, a second capacitor connected in parallel to the output terminal of the first capacitor, and a second inductor connected in series between a ground terminal and a node between a source terminal of the first transistor and the second capacitor, and

a first input frequency band is set according to resonance of capacitance of the first capacitor and inductance of the first inductor, and a second input frequency band which is higher than the first input frequency band is set according to resonance of inductance of the second inductor and a parallel combination of capacitance of the second capacitor and parasitic capacitance of the first transistor.

3. The amplifier of claim 2, wherein the first inductor of the input impedance matching circuit has one end connected to the output terminal of the first capacitor, and the other end receiving a preset first bias voltage and transmitting the voltage to a gate of the first transistor.

4. The amplifier of claim 2, wherein the second capacitor is connected between a gate terminal and a source terminal of the first transistor.

5. The amplifier of claim 2, wherein the second transistor receives a preset second bias voltage through a gate.

6. An amplifier including a multiband input impedance matching circuit having passive devices, the amplifier comprising:

a cascode amplification unit amplifying an impedance-matched radio frequency (RF) input signal; and

an input impedance matching circuit connected in series between a RF signal input terminal and the cascode amplification unit and matching impedance with the RF signal input terminal,

wherein the cascode amplification unit comprises a first transistor connected to an output terminal of the input impedance matching circuit, and a second transistor cascode-connected to the first transistor, the cascode amplification unit amplifying an RF signal from the input impedance matching circuit,

the input impedance matching circuit comprises first and second capacitors connected in series to the RF signal input terminal, a first inductor connected in series between a ground terminal and a node between the first and second capacitors, a second inductor connected in series between an output terminal of the second capacitor and a gate terminal of the first transistor, a third capacitor connected between the gate terminal and a source terminal of the first transistor, and a third inductor connected in series between the source terminal of the first transistor and a ground terminal,

a first input frequency band is set according to resonance of capacitance of the first and second capacitors and inductance of the first inductor, and a second input frequency band which is higher than the first input frequency band is set according to resonance of inductance of the second and third inductors and a parallel combination of capacitance of the third capacitor and parasitic capacitance of the first transistor.

7. The amplifier of claim 6, wherein a gate of the first transistor receives a preset first bias voltage.

8. The amplifier of claim 6, wherein a gate of the second transistor receives a preset second bias voltage.

9. An amplifier including a multiband input/output impedance matching circuit having passive devices, the amplifier comprising:

a cascode amplification unit amplifying an impedance-matched radio frequency (RF) input signal;

an input impedance matching circuit connected in series between an RF signal input terminal and the cascode amplification unit and matching impedance with the RF signal input terminal; and

an output impedance matching circuit connected in series between an RF signal output terminal and the cascode amplification unit and matching impedance with the RF signal output terminal,

wherein the cascode amplification unit comprises a first transistor connected to an output terminal of the input impedance matching circuit, and a second transistor cascode-connected to the first transistor, the cascode amplification unit amplifying an RF signal from the input impedance matching circuit,

the input impedance matching circuit comprises a first capacitor connected in series to the RF signal input terminal, a first inductor connected in parallel to an output terminal of the first capacitor, a second capacitor connected in parallel to the output terminal of the first capacitor, and a second inductor connected in series between a source terminal of the first transistor and a ground terminal, wherein

a first input frequency band is set according to resonance of capacitance of the first capacitor and inductance of the first inductor, and a second input frequency band which is higher than the first input frequency band is set according to resonance of inductance of the second inductor and a parallel combination of capacitance of the second capacitor and parasitic capacitance of the first transistor, and

the output impedance matching circuit comprises third and fourth inductors connected in series to each other between an amplification signal output terminal of the cascode amplification unit and a driving power terminal supplying preset driving power, and a third capacitor connected in series between the RF signal output terminal and a node between the third and fourth inductors, wherein

a first output frequency band is set according to resonance of inductance of the third inductor and capacitance of the third capacitor, and a second output frequency band which is higher than the first output frequency band is set according to resonance of combined inductance of the third and fourth inductors and capacitance of the third capacitor.

10. The amplifier of claim 9, wherein the first inductor of the input impedance matching circuit has one end connected to an output terminal of the first capacitor, and the other end receiving a preset first bias voltage and transmitting the voltage to a gate of the first transistor.

11. The amplifier of claim 9, wherein the second capacitor is connected between a gate terminal and a source terminal of the first transistor.

12. The amplifier of claim 9, wherein the second transistor receives a preset second bias voltage through a gate.

13. The amplifier of claim 9, wherein the output impedance matching circuit further comprises a first resistor connected in parallel to the third inductor and stabilizing an amplification operation of the cascode amplification unit.

14. The amplifier of claim 9, wherein a resonant frequency of the first input frequency band is the same as a resonant frequency of the first output frequency band, and

a resonant frequency of the second input frequency band is the same as a resonant frequency of the second output frequency band.

15. An amplifier including a multiband input/output impedance matching circuit having passive devices, the amplifier comprising:

a cascode amplification unit amplifying an impedance-matched radio frequency (RF) input signal;

an input impedance matching circuit connected in series between a radio frequency (RF) signal input terminal and the cascode amplification unit and matching impedance with the RF signal input terminal; and

an output impedance matching circuit connected in series between an RF signal output terminal and the cascode amplification unit and matching impedance with the RF signal output terminal,

wherein the cascode amplification unit comprises a first transistor connected to an output terminal of the input impedance matching circuit, and a second transistor cascode-connected to the first transistor, the cascode amplification unit amplifying an RF signal from the input impedance matching circuit,

the input impedance matching circuit comprises first and second capacitors connected in series to the RF signal input terminal, a first inductor connected in series between a ground terminal and a node between the first and second capacitors, a second inductor connected in series between an output terminal of the second capacitor and a gate terminal of the first transistor, a third capacitor connected between a gate terminal and a source terminal of the first transistor, and a third inductor connected in series between the source terminal of the first transistor and a ground terminal, wherein

a first input frequency band is set according to resonance of capacitance of the first and second capacitors and inductance of the first inductor, and a second input frequency band which is higher than the first input frequency band is set according to resonance of inductance of the second and third inductors and a parallel combination of capacitance of the third capacitor and parasitic capacitance of the first transistor, and

the output impedance matching circuit comprises fourth and fifth inductors connected in series between an amplification signal output terminal of the cascode amplification unit and a driving power terminal supplying preset driving power, and a fourth capacitor connected in series between the RF signal output terminal and a node between the fourth and fifth inductors, wherein

a first output frequency band is set according to resonance of inductance of the fourth inductor and capacitance of the fourth capacitor, and a second output frequency band which is higher than the first output frequency band is set according to combined inductance of the fourth and fifth inductors and capacitance of the fourth capacitor.

16. The amplifier of claim 15, wherein a gate of the first transistor receives a preset first bias voltage.

17. The amplifier of claim 15, wherein a gate of the second transistor receives a preset second bias voltage.

18. The amplifier of claim 15, wherein the output impedance matching circuit further comprises a first resistor connected in parallel to the fourth inductor and stabilizing an amplification operation of the cascode amplification unit.

19. The amplifier of claim 15, wherein a resonant frequency of the first input frequency band is the same as a resonant frequency of the first output frequency band, and

a resonant frequency of the second input frequency band is the same as a resonant frequency of the second output frequency band.