Programmable ROM using two bonded strata

• US 7,715,227 B2
• Filed: 10/02/2007
• Issued: 05/11/2010
• Est. Priority Date: 10/02/2007
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Alam, Syed M., Jones, Robert E.
• Primary Examiner(s): Nguyen; Tuan T
• Assistant Examiner(s): REIDLINGER, RONALD LANCE
• Application Number:
  US11/865,991
• Publication Number:
  US 20090086524A1
• Time in Patent Office: 952 Days
• Field of Search: 365/63, 365/51, 365/94, 365/100, 365103-105, 365/164, 365/166
• US Class Current: 365/164
• CPC Class Codes: G11C 17/14 in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 20/00 Read-only memory [ROM] devices
• CPC Class Codes: H10B 20/34 Source electrode or drain electrode programmed
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.

Claims

1. A programmable read only memory, comprising:

a first stratum including functional active devices and at least one non-programmed active device;

a second stratum including at least conductive routing to be associated with the at least one non-programmed active device; and

bonded programmable inter-strata connections for coupling the first stratum to the second stratum, the bonded programmable inter-strata connections further comprising bonded micropad connections and including at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for associating the conductive routing with the at least one non-programmed active device.

2. The programmable read only memory of claim 1, wherein the functional active devices further comprise:

a plurality of column select transistors;

a plurality of word line drivers; and

sense amplifiers.

3. The programmable read only memory of claim 2 wherein the at least one non-programmed active device further comprise:

an array of transistors located in the first stratum and forming a plurality of rows and columns, each transistor in the array of transistors having one current electrode that is electrically unconnected.

4. The programmable read only memory of claim 1, wherein the at least one bonded programmable inter-strata connection comprises a closed programmable inter-strata connection or an open programmable inter-strata connection.

5. The programmable read only memory of claim 4, further wherein the closed programmable inter-strata connection represents a first logic state and the open programmable inter-strata connection represents a second logic state, the second logic state being different from the first logic state.

6. The programmable read only memory of claim 4, further wherein the closed programmable inter-strata connection includes a presence of a micropad connection and wherein an open programmable inter-strata connection includes an absence of the micropad connection at a bonding interface.

7. The programmable read only memory of claim 1, wherein the bonded micropad connection includes one selected from (i) a Cu₃Sn alloy bond, (ii) a Cu—

Cu bond, and (iii) a Au—

Au bond.

8. The programmable read only memory of claim 1, wherein the first stratum comprises a semiconductor wafer or a semiconductor die and wherein the second stratum comprises a semiconductor wafer or a semiconductor die.

9. The programmable read only memory of claim 1, further wherein the functional active devices and the at least one non-programmed active device comprise portions of a system on chip.

10. A programmable read only memory, comprising:

a first stratum including functional active devices and at least one non-programmed active device;

a second stratum including at least conductive routing to be associated with the at least one non-programmed active device; and

bonded inter-strata connections for coupling the first stratum to the second stratum, the bonded inter-strata connections including at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for associating the conductive routing with the at least one non-programmed active device, wherein the programming of the at least one bonded programmable inter-strata connection is defined by a mask patterning of micropads on one selected from the group consisting of the first stratum, the second stratum, and a combination of both the first stratum and the second stratum.

11. A programmable read only memory, comprising:

a first stratum including functional active devices and at least one non-programmed active device;

a second stratum including at least conductive routing to be associated with the at least one non-programmed active device; and

bonded inter-strata connections for coupling the first stratum to the second stratum, the bonded inter-strata connections including at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for associating the conductive routing with the at least one non-programmed active device, wherein at least one of the first stratum and the second stratum comprises a substrate having at least one through substrate via, and wherein the at least one bonded programmable inter-strata connection further comprises either (i) a closed programmable inter-strata connection formed by a bonded micropad and through substrate via, or (ii) an open programmable inter-strata connection formed by an absence of a micropad and through substrate via at a bonding interface.

12. The programmable read only memory of claim 11, further wherein the first stratum comprises the substrate having the at least one through substrate via coupled to the at least one non-programmed active device, and wherein the at least one bonded programmable inter-strata connection further comprises the at least one non-programmed active device being programmed with use of the bonded micropad and the through substrate via.

13. The programmable read only memory of claim 11, further wherein the second stratum comprises the substrate having the at least one through substrate via coupled to the conductive routing, and wherein the at least one bonded programmable inter-strata connection further includes conductive material for programming the at least one non-programmed active device and for connecting the conductive routing to the non-programmed active device with the at least one through substrate via.

14. A programmed storage device comprising:

a first stratum comprising functional active devices and at least one non-programmed active device;

a second stratum comprising at least conductive routing to be associated with the at least one non-programmed active device; and

bonded inter-strata connections for coupling the first stratum to the second stratum, the bonded inter-strata connections comprising at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for associating the conductive routing with the at least one non-programmed active device, wherein the at least one bonded programmable inter-strata connection comprises one of a closed programmable inter-strata connection and an open programmable inter-strata connection, further wherein the closed programmable inter-strata connection represents a first logic state and the open programmable inter-strata connection represents a second logic state, the second logic state being different from the first logic state, still further wherein the closed programmable inter-strata connection includes a presence of a micropad connection and wherein an open programmable inter-strata connection includes an absence of the micropad connection at a bonding interface, and wherein the first stratum comprises at least one of a semiconductor wafer and a semiconductor die and wherein the second stratum comprises at least one of a semiconductor wafer and a semiconductor die.