Sputtering target, thin film for optical information recording medium and process for producing the same
First Claim
1. A thin film for an optical information recording medium prepared by a process comprising the step of forming the thin film by sputtering a sputtering target that is a sintered compact of powder having an average grain size of 1 μ
- m or less before sintering, that has a relative density of 90% or more, and that contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, wherein 1<
m, X≦
m 0<
Y≦
0.9 and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%, and wherein said compound is selected from the group consisting of In1.5Al0.5O3(ZnO)4, In1.1Ga0.9O3(ZnO)4.2, In1.5Fe0.5O3(ZnO)4, In1.1Ga0.4 Al0.5O3(ZnO)4, and In1.2Y0.3 Al0.4O3(ZnO)4.
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Accused Products
Abstract
A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
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Citations
9 Claims
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1. A thin film for an optical information recording medium prepared by a process comprising the step of forming the thin film by sputtering a sputtering target that is a sintered compact of powder having an average grain size of 1 μ
- m or less before sintering, that has a relative density of 90% or more, and that contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, wherein 1<
m, X≦
m 0<
Y≦
0.9 and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%, and wherein said compound is selected from the group consisting of In1.5Al0.5O3(ZnO)4, In1.1Ga0.9O3(ZnO)4.2, In1.5Fe0.5O3(ZnO)4, In1.1Ga0.4 Al0.5O3(ZnO)4, and In1.2Y0.3 Al0.4O3(ZnO)4. - View Dependent Claims (2, 3)
- m or less before sintering, that has a relative density of 90% or more, and that contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, wherein 1<
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4. A thin film for being located adjacent a reflective layer or a recording layer of an optical information recording medium, comprising:
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a thin film that is formed by sputtering and that is made of a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, where 1<
m, X≦
m, 0<
Y≦
0.9 and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb;said compound being selected from the group consisting of In1.5Al0.5O3(ZnO)4, In1.1Ga0.9O3(ZnO)4.2, In1.5Fe0.5O3(ZnO)4, In1.1Ga0.4Al0.5O3(ZnO)4, and In1.2Y0.3 Al0.4O3(ZnO)4; and said thin film being amorphous and stably retaining an amorphous nature when heated to 600°
C. - View Dependent Claims (5, 6, 7, 8, 9)
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Specification