Light emitting devices with compact active regions
First Claim
1. A light emitting device comprising:
- a region of first conductivity type;
a region of second conductivity type;
an active region disposed between the region of first conductivity type and the region of second conductivity type, the active region being capable of emitting light having a wavelength λ
n in the region of second conductivity type; and
a surface reflective of the light emitted by the active region, wherein one of the region of first conductivity type and the region of second conductivity type is disposed between the active region and the reflective surface;
wherein;
the active region comprises a first cluster and a second cluster, each of the first and second clusters comprising at least two quantum well layers separated by a barrier layer;
each of the first and second clusters has a total thickness less than or equal to about 580 angstroms;
a portion of the first cluster is located between 0.6λ
n and 0.75λ
n from the reflective surface;
a portion of the second cluster is located between 1.1λ
n and 1.4λ
n from the reflective surface; and
the first and second clusters are separated by a semiconductor layer that is thicker than each barrier layer.
5 Assignments
0 Petitions
Accused Products
Abstract
A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.
8 Citations
12 Claims
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1. A light emitting device comprising:
-
a region of first conductivity type; a region of second conductivity type; an active region disposed between the region of first conductivity type and the region of second conductivity type, the active region being capable of emitting light having a wavelength λ
n in the region of second conductivity type; anda surface reflective of the light emitted by the active region, wherein one of the region of first conductivity type and the region of second conductivity type is disposed between the active region and the reflective surface; wherein; the active region comprises a first cluster and a second cluster, each of the first and second clusters comprising at least two quantum well layers separated by a barrier layer; each of the first and second clusters has a total thickness less than or equal to about 580 angstroms; a portion of the first cluster is located between 0.6λ
n and 0.75λ
n from the reflective surface;a portion of the second cluster is located between 1.1λ
n and 1.4λ
n from the reflective surface; andthe first and second clusters are separated by a semiconductor layer that is thicker than each barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification