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Light emitting devices

  • US 7,719,019 B2
  • Filed: 04/21/2006
  • Issued: 05/18/2010
  • Est. Priority Date: 04/15/2003
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and

    a photonic crystal structure formed in an n-type region,wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region.

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