(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
First Claim
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1. An optical device, comprising:
- a III-nitride optoelectronic device comprised of an n-type III-nitride, an active region, and a p-type III-nitride; and
one or more transparent ZnO conductor layers wafer bonded on its Zn face to one or more sides of the III-nitride optical device to form at least one wafer bonding interface that is a fusion of the transparent conductor layers and the III-nitride optical device;
wherein light passes through the transparent ZnO conductor layers, the transparent ZnO conductor layers reduce light absorption inside the III-nitride because they are transparent, an O face of the transparent ZnO conductor layers is shaped to improve light extraction from the transparent ZnO conductor layers, and the transparent ZnO conductor layers enable uniform light emitting from the active region because they are electrically conductive.
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Reexamination
Accused Products
Abstract
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
56 Citations
20 Claims
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1. An optical device, comprising:
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a III-nitride optoelectronic device comprised of an n-type III-nitride, an active region, and a p-type III-nitride; and one or more transparent ZnO conductor layers wafer bonded on its Zn face to one or more sides of the III-nitride optical device to form at least one wafer bonding interface that is a fusion of the transparent conductor layers and the III-nitride optical device; wherein light passes through the transparent ZnO conductor layers, the transparent ZnO conductor layers reduce light absorption inside the III-nitride because they are transparent, an O face of the transparent ZnO conductor layers is shaped to improve light extraction from the transparent ZnO conductor layers, and the transparent ZnO conductor layers enable uniform light emitting from the active region because they are electrically conductive. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification