Multi-thickness layers for MEMS and mask-saving sequence for same
First Claim
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1. A method for forming at least a first microelectromechanical systems (MEMS) device, a second MEMS device, and a third MEMS device, in a first region, a second region, and a third region, respectively, the method comprising:
- providing a substrate in a reaction chamber;
depositing a first sacrificial layer onto the first, second and third regions of the substrate;
patterning and etching the first sacrificial layer by removing the first sacrificial layer from the second region, while keeping the first sacrificial layer on the first and third regions;
depositing a second sacrificial layer onto the first, second and third regions of the substrate; and
patterning and etching the second sacrificial layer by removing the second sacrificial layer from the third region, while keeping the second sacrificial layer on the first and second regions.
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Abstract
In various embodiments described herein, methods for forming a plurality of microelectromechanical systems (MEMS) devices on a substrate are described. The MEMS devices comprise x number of different sacrificial or mechanical structures with x number of different sacrificial structure thicknesses or mechanical structure stiffnesses and wherein the x number of sacrificial or mechanical structures are formed by x-1 depositions and x-1 masks.
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Citations
35 Claims
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1. A method for forming at least a first microelectromechanical systems (MEMS) device, a second MEMS device, and a third MEMS device, in a first region, a second region, and a third region, respectively, the method comprising:
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providing a substrate in a reaction chamber; depositing a first sacrificial layer onto the first, second and third regions of the substrate; patterning and etching the first sacrificial layer by removing the first sacrificial layer from the second region, while keeping the first sacrificial layer on the first and third regions; depositing a second sacrificial layer onto the first, second and third regions of the substrate; and patterning and etching the second sacrificial layer by removing the second sacrificial layer from the third region, while keeping the second sacrificial layer on the first and second regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming x number of different microelectromechanical systems (MEMS) structures on x regions of a substrate using x-1 depositions and x-1 masks wherein each of the x number of MEMS structures has a unique characteristic, wherein each characteristic corresponds to at least one of a first material and a second material, the method comprising:
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depositing the first material onto the substrate; patterning and etching the first material by removing the first material from at least one region of the substrate; depositing an etch stop layer over the first material; depositing the second material over the etch stop layer; and patterning and etching the second material by removing the second material from at least one different region of the substrate, wherein x is greater than or equal to 3. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method of forming x number of different microelectromechanical systems (MEMS) structures on x regions of a substrate using x-1 depositions and x-1 masks wherein each of the x number of MEMS structures has a unique characteristic, wherein each characteristic corresponds to at least one of a first material and a second material, the method comprising:
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depositing the first material onto the substrate; patterning and etching the first material by removing the first material from at least one region of the substrate; depositing the second material onto the substrate; and patterning and etching the second material by removing the second material from at least one different region of the substrate, wherein at least one of the first and second material comprises a dielectric material and wherein x is greater than or equal to 3. - View Dependent Claims (22, 23, 24, 25, 26)
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27. A method of forming x number of different microelectromechanical systems (MEMS) structures on x regions of a substrate using x-1 depositions and x-1 masks wherein each of the x number of MEMS structures has a unique characteristic, wherein each characteristic corresponds to at least one of a first material and a second material, the method comprising:
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depositing the first material onto the substrate; patterning and etching the first material by removing the first material from at least one region of the substrate; depositing the second material onto the substrate; and patterning and etching the second material by removing the second material from at least one different region of the substrate, wherein the x number of different MEMS structures comprise x number of different optical stacks having x number of different optical stack thicknesses and wherein x is greater than or equal to 3.
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28. A method for forming at least a first microelectromechanical systems (MEMS) device, a second MEMS device, and a third MEMS device in a first region, a second region, and a third region, respectively, the method comprising:
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providing a substrate in a reaction chamber; depositing a first mechanical layer onto the first, second, and third regions of the substrate; patterning and etching the first mechanical layer by removing the first mechanical layer from the second region, while keeping the first mechanical layer on the first and third regions; depositing a second mechanical layer onto the first, second and third regions of the substrate; and patterning and etching the second mechanical layer by removing the second mechanical layer from the first region, while keeping the second mechanical layer on the second and third regions. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35)
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Specification