Method of manufacturing a semiconductor device
First Claim
1. A method of forming a semiconductor device, the method comprising the steps of:
- forming an epitaxial layer having a second conductivity type on a first conductive type substrate;
forming a trench in the epitaxial layer;
forming a P-N junction along an inner wall of the trench;
depositing an insulation layer in the trench such that the trench is filled with the insulation layer;
etching the insulation layer such that an upper side section of the trench is exposed;
forming a gate electrode on the insulation layer;
forming a source region at opposite sides of the gate electrode; and
forming source and drain electrodes.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed are a semiconductor device having a vertical trench gate structure to improve the integration degree and a method of manufacturing the same. The semiconductor device includes an epitaxial layer having a second conductive type on a first conductive type substrate having an active region and an isolation region, a trench in the isolation region, a first conductive type first region in the epitaxial layer at opposite side portions of the trench, an isolation layer at a predetermined depth in the trench, a gate insulation layer along upper side portions of the trench, a gate electrode in an upper portion of the trench, a body region in the active region, a source electrode on the body region, a source region in an upper portion of the body region at opposite side portions of the gate electrode, and a drain electrode at a rear surface of the substrate.
8 Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising the steps of:
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forming an epitaxial layer having a second conductivity type on a first conductive type substrate; forming a trench in the epitaxial layer; forming a P-N junction along an inner wall of the trench; depositing an insulation layer in the trench such that the trench is filled with the insulation layer; etching the insulation layer such that an upper side section of the trench is exposed; forming a gate electrode on the insulation layer; forming a source region at opposite sides of the gate electrode; and forming source and drain electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification