Semiconductor light emitting element and manufacturing method thereof

• US 7,723,742 B2
• Filed: 04/12/2005
• Issued: 05/25/2010
• Est. Priority Date: 04/13/2004
• Status: Expired due to Fees

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Tanaka, Akimasa
• Primary Examiner(s): Wilson; Allan R.
• Application Number:
  US11/578,251
• Publication Number:
  US 20080031295A1
• Time in Patent Office: 1,869 Days
• Field of Search: 257/79, 257/88, 257/98, 257/E33.069
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/02345 Wire-bonding
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/0422 with n- and p-contacts on the same side of the active layer
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18388 Lenses
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

Claims

1. A semiconductor light-emitting device comprising:

a multilayer structure including a plurality of laminated semiconductor layers, having first and second main faces opposing each other, and generating light;

a first electrode arranged on the first main face of the multilayer structure;

a second electrode arranged on the second main face of the multilayer structure;

a film made of silicon oxide and formed on the first main face so as to cover the first electrode; and

a glass substrate, optically transparent to the light generated by the multilayer structure, secured to the multilayer structure through the film made of silicon oxide,

wherein the multilayer structure includes a contact layer of a first conductive type, a first distributed Bragg reflector (DBR) layer of the first conductive type, a first cladding layer of the first conductive type, an active layer, a second cladding layer of a second conductive type, and a second DBR layer of the second conductive type successively laminated as the plurality of compound semiconductor layers, and

wherein the multilayer structure has a multilayer region partially including the contact layer, first DBR layer, first cladding layer, active layer, and second cladding layer; and

an insulated or semi-insulated current-narrowing region surrounding the multilayer region,

the semiconductor light-emitting device further comprising;

a first pad electrode arranged on the second main face of the multilayer structure; and

a through lead penetrating through the multilayer structure;

wherein the first electrode includes a wiring electrode electrically connected to a part included in the multilayer region in the contact layer, the wiring electrode being electrically connected to the first pad electrode through the through lead; and

wherein the second electrode includes a second pad electrode electrically connected to the second DBR layer.

2. A semiconductor light-emitting device according to claim 1, further comprising respective bump electrodes arranged on the first and second pad electrodes.

3. A semiconductor light-emitting device according to claim 1, further comprising a light-reflecting film, provided on the second DBR layer, covering the multilayer region.

4. A semiconductor light-emitting device according to claim 2, further comprising a light-reflecting film, provided on the second DBR layer, covering the multilayer region.