Semiconductor light emitting element and manufacturing method thereof
First Claim
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1. A semiconductor light-emitting device comprising:
- a multilayer structure including a plurality of laminated semiconductor layers, having first and second main faces opposing each other, and generating light;
a first electrode arranged on the first main face of the multilayer structure;
a second electrode arranged on the second main face of the multilayer structure;
a film made of silicon oxide and formed on the first main face so as to cover the first electrode; and
a glass substrate, optically transparent to the light generated by the multilayer structure, secured to the multilayer structure through the film made of silicon oxide,wherein the multilayer structure includes a contact layer of a first conductive type, a first distributed Bragg reflector (DBR) layer of the first conductive type, a first cladding layer of the first conductive type, an active layer, a second cladding layer of a second conductive type, and a second DBR layer of the second conductive type successively laminated as the plurality of compound semiconductor layers, andwherein the multilayer structure has a multilayer region partially including the contact layer, first DBR layer, first cladding layer, active layer, and second cladding layer; and
an insulated or semi-insulated current-narrowing region surrounding the multilayer region,the semiconductor light-emitting device further comprising;
a first pad electrode arranged on the second main face of the multilayer structure; and
a through lead penetrating through the multilayer structure;
wherein the first electrode includes a wiring electrode electrically connected to a part included in the multilayer region in the contact layer, the wiring electrode being electrically connected to the first pad electrode through the through lead; and
wherein the second electrode includes a second pad electrode electrically connected to the second DBR layer.
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Abstract
A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.
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Citations
4 Claims
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1. A semiconductor light-emitting device comprising:
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a multilayer structure including a plurality of laminated semiconductor layers, having first and second main faces opposing each other, and generating light; a first electrode arranged on the first main face of the multilayer structure; a second electrode arranged on the second main face of the multilayer structure; a film made of silicon oxide and formed on the first main face so as to cover the first electrode; and a glass substrate, optically transparent to the light generated by the multilayer structure, secured to the multilayer structure through the film made of silicon oxide, wherein the multilayer structure includes a contact layer of a first conductive type, a first distributed Bragg reflector (DBR) layer of the first conductive type, a first cladding layer of the first conductive type, an active layer, a second cladding layer of a second conductive type, and a second DBR layer of the second conductive type successively laminated as the plurality of compound semiconductor layers, and wherein the multilayer structure has a multilayer region partially including the contact layer, first DBR layer, first cladding layer, active layer, and second cladding layer; and
an insulated or semi-insulated current-narrowing region surrounding the multilayer region,the semiconductor light-emitting device further comprising; a first pad electrode arranged on the second main face of the multilayer structure; and a through lead penetrating through the multilayer structure; wherein the first electrode includes a wiring electrode electrically connected to a part included in the multilayer region in the contact layer, the wiring electrode being electrically connected to the first pad electrode through the through lead; and wherein the second electrode includes a second pad electrode electrically connected to the second DBR layer. - View Dependent Claims (2, 3, 4)
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Specification