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Semiconductor light emitting element and manufacturing method thereof

  • US 7,723,742 B2
  • Filed: 04/12/2005
  • Issued: 05/25/2010
  • Est. Priority Date: 04/13/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor light-emitting device comprising:

  • a multilayer structure including a plurality of laminated semiconductor layers, having first and second main faces opposing each other, and generating light;

    a first electrode arranged on the first main face of the multilayer structure;

    a second electrode arranged on the second main face of the multilayer structure;

    a film made of silicon oxide and formed on the first main face so as to cover the first electrode; and

    a glass substrate, optically transparent to the light generated by the multilayer structure, secured to the multilayer structure through the film made of silicon oxide,wherein the multilayer structure includes a contact layer of a first conductive type, a first distributed Bragg reflector (DBR) layer of the first conductive type, a first cladding layer of the first conductive type, an active layer, a second cladding layer of a second conductive type, and a second DBR layer of the second conductive type successively laminated as the plurality of compound semiconductor layers, andwherein the multilayer structure has a multilayer region partially including the contact layer, first DBR layer, first cladding layer, active layer, and second cladding layer; and

    an insulated or semi-insulated current-narrowing region surrounding the multilayer region,the semiconductor light-emitting device further comprising;

    a first pad electrode arranged on the second main face of the multilayer structure; and

    a through lead penetrating through the multilayer structure;

    wherein the first electrode includes a wiring electrode electrically connected to a part included in the multilayer region in the contact layer, the wiring electrode being electrically connected to the first pad electrode through the through lead; and

    wherein the second electrode includes a second pad electrode electrically connected to the second DBR layer.

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