High dielectric constant transition metal oxide materials
First Claim
Patent Images
1. An integrated circuit with a capacitor array comprising:
- a plurality of conductive bottom electrodes;
a dielectric layer extending over each bottom electrode, wherein the dielectric layer comprises a transition metal oxide wherein the transition metal oxide comprises hafnium oxide with a non-metal dopant in a tetragonal crystal structure and has a dielectric constant substantially at least 30% higher than the transition metal oxide without the dopant; and
a conductive upper electrode overlying over each dielectric layer.
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Abstract
A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.
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Citations
23 Claims
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1. An integrated circuit with a capacitor array comprising:
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a plurality of conductive bottom electrodes; a dielectric layer extending over each bottom electrode, wherein the dielectric layer comprises a transition metal oxide wherein the transition metal oxide comprises hafnium oxide with a non-metal dopant in a tetragonal crystal structure and has a dielectric constant substantially at least 30% higher than the transition metal oxide without the dopant; and a conductive upper electrode overlying over each dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit with a capacitor array comprising:
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a plurality of conductive bottom electrodes; a dielectric layer extending over each bottom electrode, wherein the dielectric layer comprises a transition metal oxide wherein the transition metal oxide comprises zirconium oxide with a non-metal dopant in a tetragonal crystal structure and has a dielectric constant substantially at least 30% higher than the transition metal oxide without the dopant; and a conductive upper electrode overlying over each dielectric layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A capacitor for an integrated circuit comprising
a bottom electrode over a substrate; -
a dielectric layer overlying the bottom electrode, wherein the dielectric layer comprises a group IVB metal oxide comprising hafnium oxide and a non-metal dopant in a tetragonal crystal structure, wherein the dielectric layer has a dielectric constant greater than 25; and an upper electrode extending over the dielectric layer. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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17. A capacitor for an integrated circuit comprising
a bottom electrode over a substrate; -
a dielectric layer overlying the bottom electrode, wherein the dielectric layer comprises a group IVB metal oxide comprising zirconium oxide and a non-metal dopant in a tetragonal crystal structure, wherein the dielectric layer has a dielectric constant greater than 25; and an upper electrode extending over the dielectric layer.
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Specification