Trench structure semiconductor device and method for producing it
First Claim
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1. A trench structure semiconductor device, comprising:
- a semiconductor material region with a surface region;
at least one trench structure with a wall region and a bottom region, the at least one trench structure being provided in the interior of the semiconductor material region;
a plurality of field electrode devices formed in the interior of the trench structure as an electrode arrangement in a manner spaced apart and electrically insulated from one another and from the wall region of the trench structure by means of an insulation region; and
enlarged non-planar common interface regions with an insulation material between spatially directly adjacent and mutually adjoining field electrode devices, interfaces of the field electrode devices in the respective common interface regions being folded into one another with a mutually conformal course,wherein the insulation material has an essentially homogenous thickness.
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Abstract
A trench structure semiconductor device is disclosed. In one embodiment, field electrode devices are arranged in a trench structure, in direct spatial proximity in comparison with essentially planar or smooth conditions, have an enlarged common interface region with an insulation material in between, whereby a comparatively stronger electrical coupling of the directly adjacent field electrode devices is achieved.
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Citations
20 Claims
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1. A trench structure semiconductor device, comprising:
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a semiconductor material region with a surface region; at least one trench structure with a wall region and a bottom region, the at least one trench structure being provided in the interior of the semiconductor material region; a plurality of field electrode devices formed in the interior of the trench structure as an electrode arrangement in a manner spaced apart and electrically insulated from one another and from the wall region of the trench structure by means of an insulation region; and enlarged non-planar common interface regions with an insulation material between spatially directly adjacent and mutually adjoining field electrode devices, interfaces of the field electrode devices in the respective common interface regions being folded into one another with a mutually conformal course, wherein the insulation material has an essentially homogenous thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A trench structure semiconductor device, comprising:
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a semiconductor material region with a surface region; means for providing at least one trench structure with a wall region and a bottom region, the at least one trench structure being provided in the interior of the semiconductor material region; means for providing a plurality of field electrode devices formed in the interior of the trench structure means as an electrode arrangement in a manner spaced apart and electrically insulated from one another and from the wall region of the trench structure by an insulation region; and enlarged non-planar common interface regions with an insulation material between spatially directly adjacent and mutually adjoining field electrode devices, interfaces of the field electrode devices in the respective common interface regions being folded into one another with a mutually conformal course, wherein the insulation material has an essentially homogeneous thickness.
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Specification