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Trench structure semiconductor device and method for producing it

  • US 7,723,782 B2
  • Filed: 08/31/2006
  • Issued: 05/25/2010
  • Est. Priority Date: 08/31/2005
  • Status: Active Grant
First Claim
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1. A trench structure semiconductor device, comprising:

  • a semiconductor material region with a surface region;

    at least one trench structure with a wall region and a bottom region, the at least one trench structure being provided in the interior of the semiconductor material region;

    a plurality of field electrode devices formed in the interior of the trench structure as an electrode arrangement in a manner spaced apart and electrically insulated from one another and from the wall region of the trench structure by means of an insulation region; and

    enlarged non-planar common interface regions with an insulation material between spatially directly adjacent and mutually adjoining field electrode devices, interfaces of the field electrode devices in the respective common interface regions being folded into one another with a mutually conformal course,wherein the insulation material has an essentially homogenous thickness.

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