Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
First Claim
1. A computer-implemented method of measuring at least one manufacturing characteristic for at least one wafer from a lot of wafers manufactured by a manufacturing process, comprising:
- providing information representative of a set of candidate points to be measured by the manufacturing process on the at least one wafer from the lot of wafers;
executing, by a computer system, a plan for performing measurements on the at least one wafer from the lot of wafers to measure the at least one manufacturing characteristic, the plan defining at least one of;
which of the wafers in the lot of wafers are to be measured and which candidate points on the wafers to be measured to make measurements on;
detecting one of a plurality of events or a lack of one of the plurality of events indicating a change in the manufacturing process, the change pertaining to at least one of;
detecting a fault in the manufacturing process, and detecting a variation in a measurement of the at least one wafer;
determining whether to take more or fewer measurements on at least one subsequent wafer in the lot of wafers to be measured based on the detected event or lack of the event; and
adjusting the plan, in real time, to increase a spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take more measurements, and to decrease the spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take fewer measurements.
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Abstract
Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.
407 Citations
21 Claims
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1. A computer-implemented method of measuring at least one manufacturing characteristic for at least one wafer from a lot of wafers manufactured by a manufacturing process, comprising:
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providing information representative of a set of candidate points to be measured by the manufacturing process on the at least one wafer from the lot of wafers; executing, by a computer system, a plan for performing measurements on the at least one wafer from the lot of wafers to measure the at least one manufacturing characteristic, the plan defining at least one of;
which of the wafers in the lot of wafers are to be measured and which candidate points on the wafers to be measured to make measurements on;detecting one of a plurality of events or a lack of one of the plurality of events indicating a change in the manufacturing process, the change pertaining to at least one of;
detecting a fault in the manufacturing process, and detecting a variation in a measurement of the at least one wafer;determining whether to take more or fewer measurements on at least one subsequent wafer in the lot of wafers to be measured based on the detected event or lack of the event; and adjusting the plan, in real time, to increase a spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take more measurements, and to decrease the spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take fewer measurements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A computer-implemented system of measuring at least one manufacturing characteristic for at least one wafer from a lot of wafers manufactured by a manufacturing process, comprising:
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a memory to store information representative of a set of candidate points to be measured by the manufacturing process on the at least one wafer, and information representative of a plan for performing measurements on the at least one wafer to measure the at least one manufacturing characteristic, the plan defining at least one of;
which of the wafers in the lot of wafers are to be measured and which candidate points on the wafers to be measured to make measurements on; anda processor, coupled to the memory, programmed to detect one of a plurality of events or a lack of one of the plurality of events indicating a change in the manufacturing process, the change pertaining to at least one of;
detecting a fault in the manufacturing process, and detecting a variation in a measurement of the at least one wafer;determine whether to take more or fewer measurements on at least one subsequent wafer in the lot of wafers to be measured based on the detected event or lack of the event; and adjust the plan, in real time, to increase a spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take more measurements, and to decrease the spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take fewer measurements. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A tangible computer readable medium for measuring at least one manufacturing characteristic for at least one wafer from a lot of wafers manufactured by a manufacturing process, storing executable instructions which when executed on a processing system cause the processing system to perform a method comprising:
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providing information representative of a set of candidate points to be measured by the manufacturing process on the at least one wafer from the lot of wafers; executing, by the manufacturing process, a plan for performing measurements on the at least one wafer from the lot of wafers to measure the at least one manufacturing characteristic, the plan defining at least one of;
which of the wafers in the lot of wafers are to be measured and which candidate points on the wafers to be measured to make measurements on;detecting one of a plurality of events or a lack of one of the plurality of events indicating a change in the manufacturing process, the change pertaining to at least one of;
detecting a fault in the manufacturing process, and detecting a variation in a measurement of the at least one wafer;determining whether to take more or fewer measurements on at least one subsequent wafer in the lot of wafers to be measured due to the detected event or lack of the event; and adjusting the plan, in real time, to increase a spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take more measurements, and to decrease the spatial density of measurements on at least one subsequent wafer in the lot of wafers to be measured upon determining to take fewer measurements. - View Dependent Claims (18, 19, 20, 21)
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Specification