Dielectrostrictive sensor for measuring deformation

• US 7,726,199 B2
• Filed: 04/23/2008
• Issued: 06/01/2010
• Est. Priority Date: 04/08/2008
• Status: Active Grant

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Lee, Ho Young, Shkel, Yuri Michael, Peng, Yiyan
• Primary Examiner(s): Caputo; Lisa M
• Assistant Examiner(s): ROY, PUNAM P
• Application Number:
  US12/108,380
• Publication Number:
  US 20090249885A1
• Time in Patent Office: 769 Days
• Field of Search: 737/80
• US Class Current: 73/780
• CPC Class Codes: G01B 7/22 using change in capacitance
• CPC Class Codes: G01L 1/142 using capacitors

Abstract

An apparatus and method directed to a solid-state capacitance sensor for measuring a strain force on a dielectric including at least one pair of electrostriction sensors each sensor having at least two electrodes and each having a central axis. The central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another. Preferably, at least two pairs of sensors, forming a rosette, are provided to facilitate multi-component analysis of a sample having dielectric properties under stress/strain.

Claims

1. A solid-state capacitance sensor for measuring deformation of a sample having dielectric properties, the sensor comprising:

more than two pairs of electrostriction sensors that are shifted about 45 degrees with respect to one another to form a rosette, each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another; and

wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample substantially simultaneously in response to a force exerted on the dielectric sample.

2. The sensor of claim 1, further comprising a measuring circuit that measures capacitance of each sensor in response to the deformation, and wherein a difference in the measured capacitance is indicative of an amount and a direction of the deformation.

3. The sensor of claim 2, wherein the measuring circuit is a capacitor bridge circuit.

4. The sensor of claim 1, wherein the rosette measures components of the deformation each having a principal axis.

5. The sensor of claim 4, wherein the principal axes are substantially orthogonal to one another.

6. The sensor of claim 1, wherein the more than two pairs of sensors includes at least four pairs of sensors that are shifted about 45 degrees with respect to one another and define a rosette, wherein the rosette measures multiple components of the deformation.

7. The sensor of claim 6, wherein the electrostriction sensors include interdigitated electrodes and are pie-piece shaped, and wherein the sensors are arranged adjacent to one another so that the sensors form a shape having a substantially continuous perimeter.

8. The sensor of claim 1, wherein the electrodes include at least three interdigitated electrodes.

9. The sensor of claim 1, wherein the electrodes are supported by a substrate.

10. The sensor of claim 9, wherein the sensors are microfabricated using a CMOS technique.

11. The sensor of claim 1, wherein the deformation is at least one of a strain and a stress.

12. The sensor of claim 1, further comprising a thin layer of material disposed between the sensors and the sample to facilitate dielectric coupling between the sensors and the sample.

13. The sensor of claim 1, wherein the sensors are disposed adjacent to the sample.

14. The sensor of claim 1, wherein the sample is tempered glass and the sensors measure at least one of a group including stress and strain during formation of the glass.

15. The sensor of claim 1, wherein the sample is anisotropic.

16. The sensor of claim 1, wherein the sensors do not dissipate heat.

23. The solid-state capacitance sensor according to claim 1, wherein there is no mechanical contact between the electrostriction sensors and the dielectric sample.

24. The solid-state capacitance sensor according to claim 7, wherein the shape is an octagon.

17. A method of sensing a deformation of a sample having dielectric properties, the method comprising:

providing more than two pairs of electrostriction sensors that are shifted about 45 degrees with respect to one another to form a rosette, each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another;

positioning the sensors adjacent to the dielectric sample having a dielectric property with no mechanical contact between the sensors and the dielectric sample;

measuring a change in capacitance associated with each sensor simultaneously with each other; and

wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample in response to a force exerted on the dielectric sample.

18. The method of claim 17, further comprising computing a difference in the measured capacitance associated with each pair, and determining the deformation by computing a change in a dielectric property of the sample based on the difference;

and

wherein the electrodes do not substantially move such that the determined deformation is based substantially only on the electrostrictive response of the dielectric to the deformation.

19. The method of claim 17, wherein the more than two pairs of sensors include at least four pairs of sensors and are shifted about 45 degrees with respect to one another, wherein the sensor pairs detect multiple components of the deformation.

20. The method of claim 17, wherein the measuring step is performed using a capacitive bridge.

21. The method of claim 17, wherein the sensors include interdigitated electrodes mounted to a substrate.

22. A solid-state capacitance sensor for measuring deformation of a sample having dielectric properties, the sensor comprising:

more than two pairs of electrostriction sensors each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another;

wherein the sample is tempered glass and the sensors measure at least one of a group including stress and strain during formation of the glass; and

wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample in response to one or more forces exerted on the dielectric sample.