Dielectrostrictive sensor for measuring deformation
First Claim
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1. A solid-state capacitance sensor for measuring deformation of a sample having dielectric properties, the sensor comprising:
- more than two pairs of electrostriction sensors that are shifted about 45 degrees with respect to one another to form a rosette, each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another; and
wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample substantially simultaneously in response to a force exerted on the dielectric sample.
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Abstract
An apparatus and method directed to a solid-state capacitance sensor for measuring a strain force on a dielectric including at least one pair of electrostriction sensors each sensor having at least two electrodes and each having a central axis. The central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another. Preferably, at least two pairs of sensors, forming a rosette, are provided to facilitate multi-component analysis of a sample having dielectric properties under stress/strain.
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Citations
24 Claims
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1. A solid-state capacitance sensor for measuring deformation of a sample having dielectric properties, the sensor comprising:
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more than two pairs of electrostriction sensors that are shifted about 45 degrees with respect to one another to form a rosette, each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another; and wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample substantially simultaneously in response to a force exerted on the dielectric sample. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 23, 24)
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17. A method of sensing a deformation of a sample having dielectric properties, the method comprising:
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providing more than two pairs of electrostriction sensors that are shifted about 45 degrees with respect to one another to form a rosette, each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another; positioning the sensors adjacent to the dielectric sample having a dielectric property with no mechanical contact between the sensors and the dielectric sample; measuring a change in capacitance associated with each sensor simultaneously with each other; and wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample in response to a force exerted on the dielectric sample. - View Dependent Claims (18, 19, 20, 21)
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22. A solid-state capacitance sensor for measuring deformation of a sample having dielectric properties, the sensor comprising:
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more than two pairs of electrostriction sensors each sensor having at least two electrodes and each having a central axis, wherein the central axes are disposed in a common plane and are oriented substantially mutually perpendicularly to one another; wherein the sample is tempered glass and the sensors measure at least one of a group including stress and strain during formation of the glass; and wherein the more than two pairs of electrostriction sensors include at least one pair of dummy sensors, and wherein the dummy sensors are used as a reference in resolving three dimensional components of deformation of the dielectric sample in response to one or more forces exerted on the dielectric sample.
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Specification