Method and apparatus for preparing thin film

• US 7,727,597 B2
• Filed: 09/30/2005
• Issued: 06/01/2010
• Est. Priority Date: 11/22/2004
• Status: Expired due to Fees

• Current Assignee: Eizo Watanabe, ITEQ Corporation, Tokyo University of Agriculture and Technology
• Original Assignee: Eizo Watanabe, ITEQ Corporation, National University Corporation Tokyo University of Agriculture and Technology
• Inventors: Watanabe, Toshiyuki, Miyake, Hideo, Sone, Masato, Iida, Masayasu, Watanabe, Eizo, Matsuoka, Yoshinori
• Primary Examiner(s): Norton; Nadine G
• Assistant Examiner(s): Dahimene; Mahmoud
• Application Number:
  US11/719,806
• Publication Number:
  US 20080166491A1
• Time in Patent Office: 1,705 Days
• Field of Search: 427/248.1, 427/328, 427/421.1, 427/427.7, 427/331, 118/302
• US Class Current: 427/427.7
• CPC Class Codes: C23C 18/02 by thermal decomposition
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: C23C 18/1212 Zeolites, glasses
• CPC Class Codes: C23C 18/1279 performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
• CPC Class Codes: C23C 4/123 Spraying molten metal
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02277 the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers

Abstract

The present invention provides a method and an apparatus for preparing a silicon-containing solid film, which can form a thin film uniformly over a wide area. Raw-material fluid comprising a silane derivative and a hydrocarbon derivative is mixed with carrier fluid comprising carbon dioxide to form a supercritical condition. Further, an active-state is produced in the raw-material fluid of the supercritical fluid by a catalytic reaction with at least one metal catalyst selected from a group consisting of platinum, tungsten, cobalt, nickel, iron or an alloy of each of them. The fluid is blown to the substrate, thereby forming a silicon-containing solid film or a hydrocarbon-containing solid film on the substrate.

Claims

1. A method of preparing a polysilicon film on a substrate, the method comprising the steps of:

contacting a raw-material fluid containing a compound selected from the group consisting of silane, silicon tetrachloride, trichlorosilane, dichlorosilane, monochlorosilane, tetrakisdimethylaminosilane, trisdimethylaminosilane, bisdimethylaminosilane and dimethylaminosilane and a carrier fluid together to form a mixture that is in a supercritical state;

decomposing the compound in the mixture using a catalyst disposed within a chamber to form a radical; and

contacting the substrate with the radical in the chamber to form the polysilicon film on the substrate.

2. The method according to claim 1, wherein the catalyst is at least one metal selected from a group consisting of platinum, tungsten, cobalt, nickel, iron and alloys thereof.

3. The method according to claim 1, wherein the raw-material fluid and the carrier fluid are contacted together to form the mixture before the mixture is introduced into the chamber.

4. The method according to claim 1, where the raw-material fluid and the carrier fluid are independently introduced into the chamber and contacted together therein to form the mixture.

5. The method according to claim 1, wherein the silane derivative compound is dimethylaminosilane.

6. The method according to claim 1, wherein the carrier fluid is carbon dioxide.

7. A method for producing a polysilicon comprising:

contacting a raw-material fluid containing a compound selected from the group consisting of silane, silicon tetrachloride, trichlorosilane, dichlorosilane, monochlorosilane, tetrakisdimethylaminosilane, trisdimethylaminosilane, bisdimethylaminosilane and dimethylaminosilane and a carrier fluid together to form a mixture that is in a supercritical state;

decomposing the compound in the mixture using a catalyst disposed within a chamber to form a radical; and

contacting a substrate with the radical in the chamber to form the polysilicon on the substrate.