Controlled composition using plasma-enhanced atomic layer deposition
First Claim
Patent Images
1. A method of depositing a metallic-compound film in a plasma-enhanced atomic layer deposition (PEALD) process, comprising:
- alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of at least three different reactants, the at least three different reactants comprising;
a metal source chemical;
a plasma-excited species; and
a source chemical of a non-metal species desired in the metallic-compound film,wherein plasma parameters for generating the plasma-excited species are selected to reduce the oxidation state of the metal in the metallic-compound film relative to its oxidation state in the metal source chemical and achieve the metallic-compound film with a predetermined composition.
2 Assignments
0 Petitions
Accused Products
Abstract
Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.
-
Citations
32 Claims
-
1. A method of depositing a metallic-compound film in a plasma-enhanced atomic layer deposition (PEALD) process, comprising:
-
alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of at least three different reactants, the at least three different reactants comprising; a metal source chemical; a plasma-excited species; and a source chemical of a non-metal species desired in the metallic-compound film, wherein plasma parameters for generating the plasma-excited species are selected to reduce the oxidation state of the metal in the metallic-compound film relative to its oxidation state in the metal source chemical and achieve the metallic-compound film with a predetermined composition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
-
-
26. An atomic layer deposition (ALD) process for growing a thin metallic-compound film, comprising alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of:
-
a precursor of a metal that forms no more than about one monolayer of adsorbed species on an exposed surface of the substrate, the adsorbed species comprising at least one type of metal; a plasma-excited species reacting with the metal; and a source chemical of a species to be incorporated in the thin metallic-compound film, wherein plasma parameters for generating the plasma-excited species are selected such that the stoichiometric ratio between the metal and the species in the thin metallic-compound film is greater than one. - View Dependent Claims (27, 28, 29, 30, 31, 32)
-
Specification