Method for controlling conductivity of Ga2O3single crystal
First Claim
1. A method of controlling a conductivity of a Ga2O3 system single crystal, comprising:
- adding an n-type dopant to the Ga2O3 system single crystal to change a resistivity of the Ga2O3 system single crystal substantially linearly with an added amount of the n-type dopant,wherein the n-type dopant comprises one of Zr, Si, Hf, Ge, Sn, and Ti,wherein the Ga2O3 system single crystal is prepared with a Ga2O3 polycrystalline raw material, andwherein the Ga2O3 polycrystalline raw material has a purity of 6N.
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Abstract
To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a β-Ga2O3 system single crystal can be efficiently controlled.
The light emitting element includes an n-type β-Ga2O3 substrate, and an n-type β-AlGaO3 cladding layer, an active layer, a p-type β-AlGaO3 cladding layer and a p-type β-Ga2O3 contact layer which are formed in order on the n-type β-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10−3 to 8×102 Ωcm and a carrier concentration is controlled to fall within the range of 5.5×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10−5 to 1 mol %.
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Citations
9 Claims
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1. A method of controlling a conductivity of a Ga2O3 system single crystal, comprising:
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adding an n-type dopant to the Ga2O3 system single crystal to change a resistivity of the Ga2O3 system single crystal substantially linearly with an added amount of the n-type dopant, wherein the n-type dopant comprises one of Zr, Si, Hf, Ge, Sn, and Ti, wherein the Ga2O3 system single crystal is prepared with a Ga2O3 polycrystalline raw material, and wherein the Ga2O3 polycrystalline raw material has a purity of 6N. - View Dependent Claims (2, 3, 4, 5)
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6. A method of controlling a conductivity of a Ga2O3 system single crystal, comprising:
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contacting a Ga2O3 polycrystalline raw material comprising a predetermined dopant to a Ga2O3 seed crystal; and growing the Ga2O3 system single crystal on the Ga2O3 seed crystal such that said predetermined dopant is substituted for Ga in the Ga2O3 system single crystal to obtain a desired resistivity in the Ga2O3 system single crystal of 1×
103 Ω
cm or greater,wherein said predetermined dopant comprises a p-type dopant for controlling said conductivity of the Ga2O3 system single crystal, said p-type dopant comprising one of H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb, and wherein said Ga2O3 polycrystalline raw material has a purity of 6N. - View Dependent Claims (7)
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8. A method of manufacturing a Ga2O3 system single crystal, comprising:
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adding an n-type dopant to the Ga2O3 system single crystal, said n-type dopant comprising one of Zr, Si, Hf, Ge, Sn, and Ti; and manufacturing the Ga2O3 system single crystal having a resistivity depending on an added amount of said n-type dopant by changing the resistivity of the Ga2O3 system single crystal substantially linearly with the added amount of said n-type dopant, wherein the Ga2O3 system single crystal is prepared with a Ga2O3 polycrystalline raw material, and wherein the Ga2O3 polycrystalline raw material has a purity of 6N. - View Dependent Claims (9)
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Specification