Imaging system with negative electron affinity photocathode

• US 7,728,274 B2
• Filed: 03/30/2007
• Issued: 06/01/2010
• Est. Priority Date: 03/30/2007
• Status: Expired due to Fees

• Current Assignee: Subrahmanyam Pilla
• Original Assignee: Subrahmanyam Pilla
• Inventors: Kadiyala, Srinivas, Pilla, Subrahmanyam
• Primary Examiner(s): Luu; Thanh X
• Assistant Examiner(s): Bennett; Jennifer
• Application Number:
  US11/693,990
• Publication Number:
  US 20080237771A1
• Time in Patent Office: 1,159 Days
• Field of Search: 250/214.VT, 250/207, 250/214.LA, 250/330, 257/458, 313542-544, 313/103.R, 313/103.CM
• US Class Current: 250/214.0LA
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 23/21 from near infrared [NIR] radiation
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

A viewing system configured to combine multiple spectral images of a scene, the system includes a spectral beam separator configured to split an incoming beam of radiation into a first and a second beam of radiation, the first beam of radiation including radiations substantially in a first spectral band and the second beam of radiation including radiations substantially in a second spectral band; an image intensifier configured to intensify the second beam of radiation, the image intensifier including a photocathode configured to produce a flux of photoelectrons with substantially increased efficiency when exposed to the second beam of radiation, the photocathode constructed and arranged to substantially absorb all the radiations in the second beam of radiation; a current amplifier configured to amplify the flux of photoelectrons; and a display system configured to display an image of the scene in the second spectral band based on the amplified flux of electrons simultaneously with an image of the scene in the first spectral band.

Claims

1. An imaging system comprising:

an image intensifier configured to intensify a beam of radiation, the image intensifier including a negative electron affinity photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, one or more dielectric layers, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer;

a current amplifier configured to amplify flux of photoelectrons; and

a display system configured to display an image of a scene in the selected spectral band associated to the beam of radiation based on the amplified flux of electrons,

wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation, and

wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.

2. The system of claim 1, wherein the coherent layer is adapted to produce standing waves within the intrinsic semiconductor layer.

3. The system of claim 1, wherein a first side of the p+ layer is cessiated to lower its electron affinity to substantially negative values.

4. The system of claim 3, wherein an insulating layer is positioned between the p+ doped layer and a first electrode, the first electrode part of an electrode assembly that is adapted to apply a voltage bias within the photocathode to migrate the photoelectrons from the intrinsic semiconductor layer toward the p+ doped semiconductor layer.

5. The system of claim 4, wherein the first electrode is a metal grid.

6. The system of claim 5, wherein the metal grid is traversed by the flux of photoelectrons.

7. An imaging system comprising:

an image intensifier configured to intensify a beam of radiation, the image intensifier including a negative electron affinity photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, one or more dielectric layers, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer;

a current amplifier configured to amplify the flux of photoelectrons;

a display system configured to display an image of a scene in the selected spectral band associated to the beam of radiation based on the amplified flux of electrons, and

a first and a second electrode to apply a voltage bias within the photocathode to migrate the photoelectrons from the intrinsic semiconductor layer toward the p+ doped semiconductor layer and a substantially thin insulating layer positioned between the intrinsic layer and the first electrode to reduce dark current generated in the intrinsic layer,

wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation.

8. The system of claim 7, wherein the first electrode is a metal electrode positioned proximate a first side of the p+ doped semiconductor layer, the intrinsic layer positioned on a second side of the p+ doped semiconductor layer.

9. The system of claim 8, wherein the first electrode is a metal grid and the insulating layer is a grid substantially matching the first electrode grid.

10. The system of claim 9, wherein the metal grid has a metal surface area that is less than about 20% of a total surface area of the first side of the p+ doped semiconductor layer.

11. The system of claim 9, wherein the metal grid is traversed by the flux of photoelectrons.

12. The system of claim 7, wherein the second electrode is substantially transparent and is in electrical contact with the n+ doped semiconductor layer positioned on the intrinsic semiconductor layer.

13. The system of claim 7, wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.

14. An image intensifier configured to intensify a beam of radiation, the image intensifier comprising a photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, one or more dielectric layers, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer,

wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation, and

wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band of the beam of radiation.

15. The intensifier of claim 14, wherein the coherent layer adapted to produce standing waves within the intrinsic semiconductor layer.

16. An image intensifier configured to intensify a beam of radiation, the image intensifier comprising a photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, one or more dielectric layers, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer, and

a first and a second electrode to apply a voltage bias within the photocathode to migrate the photoelectrons from the intrinsic semiconductor layer toward the p+ doped semiconductor layer,

wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation.

17. The intensifier of claim 16, wherein the first electrode is a metal electrode positioned proximate a first side of the p+ doped semiconductor layer, the intrinsic layer positioned on a second side of the p+ doped semiconductor layer.

18. The intensifier of claim 17, wherein the first electrode is a metal grid.

19. The intensifier of claim 18, wherein the metal grid has a metal surface area that is less than about 20% of a total surface area of the first side of the p+ doped semiconductor layer.

20. The intensifier of claim 19, wherein the metal grid is traversed by the flux of photoelectrons.

21. The intensifier of claim 16, wherein the second electrode includes the n+ doped semiconductor layer positioned on the intrinsic semiconductor layer.

22. The intensifier of claim 16, wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.

23. An image intensifier configured to intensify a beam of radiation, the image intensifier comprising a photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, one or more dielectric layers, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer, and

an insulating layer configured to reduce dark current generated in the intrinsic layer,

wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation.

24. The intensifier of claim 23, wherein the insulating layer is positioned between the p+ doped semiconductor layer and a first electrode, the first electrode part of an electrode assembly that is adapted to apply a voltage bias within the photocathode to migrate the photoelectrons from the intrinsic semiconductor layer toward the p+ doped semiconductor layer.

25. The intensifier of claim 24, wherein the first electrode is a metal grid.

26. The intensifier of claim 25, wherein the metal grid is traversed by the flux of photoelectrons.

27. The intensifier of claim 23, wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.

28. An image intensifier configured to intensify a beam of radiation, the image intensifier comprising a photocathode configured to produce a flux of photoelectrons when exposed to the beam of radiation, the beam of radiation including essentially radiations in a selected spectral band, the photocathode including a n+ doped semiconductor layer, an intrinsic semiconductor layer and a p+ doped semiconductor layer, the intrinsic semiconductor layer substantially thicker than the p+ doped layer such that substantially all of the photoelectrons are produced in the intrinsic layer, and

a first and a second electrode to apply a voltage bias within the photocathode to migrate the photoelectrons from the intrinsic semiconductor layer toward the p+ doped semiconductor layer and a substantially thin insulating layer positioned between the intrinsic layer and the first electrode to reduce dark current generated in the intrinsic layer,

wherein the n+ doped semiconductor layer and the p+ doped semiconductor layer are arranged such that, in use, the beam of radiation enters the n+ doped semiconductor layer before reaching the p+ doped semiconductor layer.

29. The intensifier of claim 28, wherein the photocathode includes one or more dielectric layers and wherein the one or more dielectric layers, the n+ doped semiconductor layer, the intrinsic semiconductor layer and the p+ doped semiconductor layer are constructed and arranged to form an optically coherent layer for the beam of radiation.

30. The intensifier of claim 29, wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.

31. The intensifier of claim 28, wherein the first electrode is a metal electrode positioned proximate a first side of the p+ doped semiconductor layer, the intrinsic layer positioned on a second side of the p+ doped semiconductor layer.

32. The intensifier of claim 31, wherein the first electrode is a metal grid and the insulating layer is a grid substantially matching the first electrode grid.

33. The intensifier of claim 32, wherein the metal grid has a metal surface area that is less than about 20% of a total surface area of the first side of the p+ doped semiconductor layer.

34. The intensifier of claim 32, wherein the metal grid is traversed by the flux of photoelectrons.

35. The intensifier of claim 28, wherein the one or more dielectric layers are selected to reduce transmission of radiations in spectral bands outside the selected spectral band in the beam of radiation.