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Boundary isolation for microelectromechanical devices

  • US 7,728,339 B1
  • Filed: 05/03/2002
  • Issued: 06/01/2010
  • Est. Priority Date: 05/03/2002
  • Status: Active Grant
First Claim
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1. A micromechanical structure, comprising:

  • a region of semiconductor material having a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material;

    insulative material covering the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary, a silicon beam coupled to the insulative material, wherein the silicon beam is mechanically compliant and permits the region of semiconductor material to have a range of motion and wherein the silicon beam comprises a lower layer of silicon and an upper insulative layer.

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