Image sensor and method for manufacturing the same
First Claim
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1. An apparatus comprising:
- a substrate including at least one circuit element;
a bottom electrode and a first conductive layer sequentially formed over the substrate;
a strained intrinsic layer formed over the first conductive layer;
a second conductive layer formed over the strained intrinsic layer; and
an upper electrode formed over the second conductive layer.
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Abstract
An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.
42 Citations
17 Claims
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1. An apparatus comprising:
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a substrate including at least one circuit element; a bottom electrode and a first conductive layer sequentially formed over the substrate; a strained intrinsic layer formed over the first conductive layer; a second conductive layer formed over the strained intrinsic layer; and an upper electrode formed over the second conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus comprising:
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a substrate including at least a first circuit element; a bottom electrode formed over the substrate; a first conductive silicon layer formed over the bottom electrode; a silicon-germanium intrinsic layer formed over the first conductive silicon layer; a second conductive layer formed over the silicon-germanium intrinsic layer; and an upper electrode formed over the second conductive layer. - View Dependent Claims (10, 11, 12)
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13. A method comprising:
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sequentially forming a bottom electrode and a first conductive layer over a substrate including at least one circuit element; forming a strained intrinsic layer over the first conductive layer; forming a second conductive layer over the strained intrinsic layer; and forming an upper electrode over the second conductive layer, wherein the lattice constant for the strained intrinsic layer is smaller than the lattice constant for the first conductive layer. - View Dependent Claims (14, 15, 16, 17)
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Specification