Semiconductor device having diode and IGBT
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate including a first conductive type layer;
a plurality of IGBT regions, each of which provides an IGBT element; and
a plurality of diode regions, each of which provides a diode element, whereinthe plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate, whereineach diode region includes a Schottky contact region having a second conductive type, whereinthe Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer, and whereinthe Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region.
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Abstract
A semiconductor device includes: a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element. The plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate. Each diode region includes a Schottky contact region having a second conductive type. The Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer. The Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element, wherein the plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate, wherein each diode region includes a Schottky contact region having a second conductive type, wherein the Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer, and wherein the Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a semiconductor substrate including a silicon substrate and a first conductive type layer, wherein the first conductive type layer is disposed on the silicon substrate; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element, wherein the plurality of IGBT regions and the plurality of diode regions are alternately arranged in the semiconductor substrate, wherein each diode region includes a Schottky contact region having a second conductive type, wherein the Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer, wherein the Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region, wherein each diode region further includes a second conductive type region and an ohmic contact region having the second conductive type, wherein the second conductive type region is disposed in a second surface portion of the first conductive type layer, wherein the second conductive type region is disposed on an inside of the diode region from the Schottky contact region, wherein the ohmic contact region is disposed in a surface portion of the second conductive type region, wherein the ohmic contact region has an impurity concentration higher than the second conductive type region, wherein each diode region further includes a trench, which surrounds the second conductive type region and the Schottky contact region, and wherein the trench has a rectangular shape, penetrates the second conductive type region and the Schottky contact region, and reaches the first conductive type layer.
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Specification