Small-pitch three-dimensional mask-programmable memory
First Claim
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1. A small-pitch three-dimensional mask-programmable memory (SP-3DmM), comprising:
- a semiconductor substrate having a peripheral circuit, said peripheral circuit comprising a plurality of functional transistors, said functional transistors comprising a plurality of gates in parallel; and
at least one mask-programmable memory level stacked above said substrate and coupled to said peripheral circuit through a plurality of inter-level vias, said mask-programmable memory level comprising a plurality of diodes and a plurality of address-selection lines in parallel, said diodes coupled to said address-selection lines, whereby said peripheral circuit reads data from said mask-programmable memory level;
wherein the minimum pitch of said address-selection lines of said mask-programmable memory level is smaller than the minimum pitch of said gates of said functional transistors.
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Abstract
The present invention discloses a small-pitch three-dimensional mask-programmable memory (SP-3DmM). It is an ultra-low-cost and ultra-high-density semiconductor memory. SP-3DmM comprises a mask-programmable memory level stacked above the substrate. This memory level comprises diodes but no transistors or antifuses. Its minimum line pitch is smaller than the minimum gate pitch of the substrate transistors.
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19 Claims
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1. A small-pitch three-dimensional mask-programmable memory (SP-3DmM), comprising:
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a semiconductor substrate having a peripheral circuit, said peripheral circuit comprising a plurality of functional transistors, said functional transistors comprising a plurality of gates in parallel; and at least one mask-programmable memory level stacked above said substrate and coupled to said peripheral circuit through a plurality of inter-level vias, said mask-programmable memory level comprising a plurality of diodes and a plurality of address-selection lines in parallel, said diodes coupled to said address-selection lines, whereby said peripheral circuit reads data from said mask-programmable memory level; wherein the minimum pitch of said address-selection lines of said mask-programmable memory level is smaller than the minimum pitch of said gates of said functional transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification