Systems and methods for single integrated substrate cleaning and rinsing

• US 7,731,800 B2
• Filed: 03/29/2005
• Issued: 06/08/2010
• Est. Priority Date: 07/07/2004
• Status: Active Grant

• Current Assignee: Nano OM LLC
• Original Assignee: Nano OM LLC
• Inventors: Puri, Suraj
• Primary Examiner(s): Cleveland; Michael
• Assistant Examiner(s): BLAN, NICOLE R
• Application Number:
  US11/093,904
• Publication Number:
  US 20060151000A1
• Time in Patent Office: 1,897 Days
• Field of Search: 134/1, 134/1.3, 134/2, 134/19, 134/34, 134/184
• US Class Current: 134/1.3
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels

Abstract

Inventive methods and systems of cleaning patterned integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: (1) providing the patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other; (2) charging a solution, which contains at least a solute selected to promote cleaning of the patterned integrated circuit substrate, to produce a charged solution, wherein at least a portion of the solute is present as clusters in the charged solution; and (3) conveying the charged solution for cleaning the patterned integrated circuit substrate.

Claims

1. A method for cleaning a patterned integrated circuit substrate, comprising:

providing said patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other;

charging a solution, which contains at least a solute and a solvent, in a first chamber to produce a charged solution, that includes solute clusters, in which a solute is surrounded by a plurality of solvent molecules;

conveying to a second chamber, which is different from said first chamber, said charged solution for cleaning said patterned integrated circuit substrate, and each of said first chamber and said second chamber include a bottom surface; and

diluting said charged solution to produce a cleaning solution.

2. The method of claim 1, wherein in said cleaning solution, said solute is present in a solvent in a volumetric ratio that is between about 5×

10<sup>−

5</sup>;

1 and about 1×

10<sup>−

24</sup>;

1.

3. The method of claim 1, wherein said using includes applying acoustic energy to said cleaning solution for removing contaminant particles from said patterned integrated circuit substrate.

4. The method of claim 1, wherein said diluting includes diluting said charged solution by adding more solvent.

5. The method of claim 1, further comprising cleaning said patterned integrated circuit substrate using said cleaning solution.

6. The method of claim 1, wherein said charging is caused by acoustically vibrating said patterned integrated circuit substrate.

7. The method of claim 6, wherein said acoustically vibrating includes applying megasonic energy.

8. The method of claim 1, wherein said solute is ammonium hydroxide.

9. The method of claim 8, wherein said charging includes having ammonium hydroxide present in a solvent in a volumetric ratio that is between about 1×

10<sup>−

3</sup>;

1 and about 1×

10<sup>−

24</sup>;

1.

10. The method of claim 9, wherein said ammonium hydroxide is present in a solvent in a volumetric ratio that is between about 5×

10<sup>−

5</sup>;

1 and about 1×

10<sup>−

24</sup>.

11. The method of claim 10, wherein said ammonium hydroxide is present in said solvent in a volumetric ratio that is between about 1×

10<sup>−

8</sup>;

1 and about 1×

10<sup>−

24</sup>.

12. The method of claim 1, further comprising mixing a solvent and said solute to produce said solution before said charging said solution.

13. The method of claim 1, wherein said solvent is deionized water.

14. The method of claim 13, wherein said mixing produces said solution having said solute present in said solvent in a volumetric ratio that is between about 3×

10<sup>−

5</sup>;

1 and about 1×

10<sup>−

24</sup>.

15. A method for producing a charged solution, comprising:

acoustically vibrating a solution, which contains a solute and a solvent, in a first chamber to produce a charged solution that includes solute clusters, in which a solute is surrounded by many solvent molecules;

diluting said charged solution to produce a more charged solution;

conveying said more charged solution to a second chamber, which is different from said first chamber, for cleaning said integrated circuit substrate.

16. The method of claim 15, wherein said diluting includes diluting said charged solution by adding more solvent.

17. The method of claim 15, further comprising cleaning a patterned integrated circuit substrate using said more charged solution in said second chamber.

18. The method of claim 15, wherein said charging includes having ammonium hydroxide present in a solvent in a volumetric ratio that is between about 1×

10<sup>−

3</sup>;

1 and about 1×

10<sup>−

24</sup>;

1.

19. The method of claim 18, wherein said ammonium hydroxide is present in a solvent in a volumetric ratio that is between about 5×

10<sup>−

5</sup>;

1 and about 1×

10<sup>−

24</sup>.

20. The method of claim 19, wherein said ammonium hydroxide is present in said solvent in a volumetric ratio that is between about 1×

10<sup>−

8</sup>;

1 and about 1×

10<sup>−

24</sup>.