Hybrid MRAM array structure and operation
First Claim
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1. A method of fabricating a memory device, comprising:
- providing a substrate;
forming an access transistor on said substrate, said access transistor having a first active area and a second active area;
providing a bit line in electrical contact with said first active area;
providing an interconnect in electrical contact with said second active area;
forming a first write only line;
forming a first sense line associated with a first plurality of memory bits, said first sense line being formed over said access transistor and in electrical contact with said interconnect, wherein said interconnect is in electrical contact with said first plurality of memory bits via said first sense line;
forming said first plurality of memory bits, each of said first plurality of memory bits being formed over, and in electrical contact with, said first sense line;
forming a second sense line, said second sense line being formed over said first plurality of memory bits and in electrical contact with said interconnect;
forming a second plurality of memory bits, each of said second plurality of memory bits being formed over, and in electrical contact with, said second sense line.
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Abstract
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.
27 Citations
16 Claims
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1. A method of fabricating a memory device, comprising:
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providing a substrate; forming an access transistor on said substrate, said access transistor having a first active area and a second active area; providing a bit line in electrical contact with said first active area; providing an interconnect in electrical contact with said second active area; forming a first write only line; forming a first sense line associated with a first plurality of memory bits, said first sense line being formed over said access transistor and in electrical contact with said interconnect, wherein said interconnect is in electrical contact with said first plurality of memory bits via said first sense line; forming said first plurality of memory bits, each of said first plurality of memory bits being formed over, and in electrical contact with, said first sense line; forming a second sense line, said second sense line being formed over said first plurality of memory bits and in electrical contact with said interconnect; forming a second plurality of memory bits, each of said second plurality of memory bits being formed over, and in electrical contact with, said second sense line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for forming a memory device, comprising:
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providing a sense amplifier; providing an interconnect; providing an access transistor, said access transistor being capable of electrically connecting said sense amplifier with said interconnect; providing a plurality of array planes over said access transistor, each of said array planes comprising a plurality of memory cells organized into a plurality of rows and a plurality of columns; providing a plurality of common lines, each of said common lines being associated with and coupled to a respective column of said plurality of memory cells; and forming a first write only line;
providing a plurality of sense lines, each of said sense lines being associated with and coupled to a respective row of said plurality of memory cellswherein each of said common lines is coupled to one of said plurality of sense lines on each of said plurality of array planes via one of said plurality of memory cells. - View Dependent Claims (14, 15, 16)
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Specification