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Bonded intermediate substrate and method of making same

  • US 7,732,301 B1
  • Filed: 04/18/2008
  • Issued: 06/08/2010
  • Est. Priority Date: 04/20/2007
  • Status: Active Grant
First Claim
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1. A method of making a bonded intermediate substrate, comprising:

  • forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate;

    bonding the N-terminated surface of the GaN source substrate to a handle substrate;

    exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed;

    depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer; and

    annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer, wherein an in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.

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