Bonded intermediate substrate and method of making same
First Claim
1. A method of making a bonded intermediate substrate, comprising:
- forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate;
bonding the N-terminated surface of the GaN source substrate to a handle substrate;
exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed;
depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer; and
annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer, wherein an in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.
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Abstract
A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.
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Citations
7 Claims
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1. A method of making a bonded intermediate substrate, comprising:
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forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate; bonding the N-terminated surface of the GaN source substrate to a handle substrate; exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed; depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer; and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer, wherein an in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification
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- Resources
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Current AssigneeKoninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
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Original AssigneeAonex Technologies Inc. (AmberWave Systems Corporation)
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InventorsPark, Young-Bae, Pinnington, Thomas Henry, Ladous, Corinne, Olson, Sean, Zahler, James M.
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Primary Examiner(s)Ghyka; Alexander G
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Assistant Examiner(s)Nikmanesh; Seahvosh J
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Application NumberUS12/081,702Time in Patent Office781 DaysField of Search438/46, 438/455, 438/458, 438/580, 438/795, 438/796, 257/E21.097, 257/E21.152US Class Current438/455CPC Class CodesH01L 21/2654 in AIIIBV compoundsH01L 21/76254 with separation/delaminatio...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H01L 33/0093 Wafer bonding; Removal of t...
