Simplified pitch doubling process flow
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- patterning a layer of photoresist material to form a plurality of photoresist mandrels over a hard mask layer, the photoresist mandrels having a pitch of about 150 nm or less;
using an atomic layer deposition technique to blanket deposit an oxide material onto the plurality of mandrels;
depositing another layer of photoresist material on the blanket deposited oxide material;
patterning the other layer of photoresist material;
anisotropically etching the oxide material to form spacers on sidewalls of mandrels and to pattern oxide under the patterned other layer of photoresist material;
etching the photoresist material of the layer of photoresist material and the other layer of photoresist material selectively with respect to the oxide material, thereby forming a plurality of free-standing oxide spacers over the hard mask layer;
transferring a pattern defined by the spacers and the patterned oxide to the hard mask layer; and
transferring the pattern to a substrate underlying the hard mask layer.
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Abstract
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
611 Citations
13 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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patterning a layer of photoresist material to form a plurality of photoresist mandrels over a hard mask layer, the photoresist mandrels having a pitch of about 150 nm or less; using an atomic layer deposition technique to blanket deposit an oxide material onto the plurality of mandrels; depositing another layer of photoresist material on the blanket deposited oxide material; patterning the other layer of photoresist material; anisotropically etching the oxide material to form spacers on sidewalls of mandrels and to pattern oxide under the patterned other layer of photoresist material; etching the photoresist material of the layer of photoresist material and the other layer of photoresist material selectively with respect to the oxide material, thereby forming a plurality of free-standing oxide spacers over the hard mask layer; transferring a pattern defined by the spacers and the patterned oxide to the hard mask layer; and transferring the pattern to a substrate underlying the hard mask layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification