Display device, manufacturing method thereof, and television receiver

• US 7,732,818 B2
• Filed: 04/09/2008
• Issued: 06/08/2010
• Est. Priority Date: 01/26/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Maekawa, Shinji, Shoji, Hironobu, Yamazaki, Shunpei
• Primary Examiner(s): Coleman; W. David
• Assistant Examiner(s): SHOOK, DANIEL P
• Application Number:
  US12/100,083
• Publication Number:
  US 20080199992A1
• Time in Patent Office: 790 Days
• Field of Search: 257/E29.292, 257/E29.294, 257/72, 257/E27.111, 438/158, 438/66, 348/739
• US Class Current: 257/72
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing

Abstract

The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.

Claims

1. A display device comprising:

a base layer comprising a metal material, and formed over a substrate;

a gate electrode formed over a first portion of the base layer;

a gate insulating film covering the gate electrode and the second portion of the base layer, the gate insulating film comprising a plurality of insulating layers;

a semiconductor layer formed over the gate insulating film, the semiconductor layer comprising a microcrystalline semiconductor;

source and drain regions formed over the semiconductor layer;

source and drain electrodes formed over the source and drain regions, respectively; and

a protective layer formed over source and drain electrodes;

wherein the second portion of the base layer is in contact with the first portion of the base layer, and

wherein the second portion of the base layer is insulated.

4. The display device according to claim 1, wherein a raman spectrum of Si—

Si conjunction of the semiconductor layer shifts to a side of lower wave number than 520 cm<sup>−

1</sup>.

5. The display device according to claim 1, further comprising scanning lines and signal lines over the substrate, wherein the scanning lines and the signal lines are controlled by external driver circuits.

6. The display device according to claim 1, further comprising at least one driver IC mounted over the substrate.

7. The display device according to claim 1, further comprising at least one driver circuit formed integrally over the substrate.

8. The display device according to claim 1, wherein the gate insulating film comprises a first silicon nitride layer, a silicon oxide layer, and a second silicon nitride layer.

9. The display device according to claim 1, further comprising a protective diode formed over the substrate.

10. The display device according to claim 1, wherein the protective layer comprises one of silicon nitride and silicon nitride oxide.

11. The display device according to claim 1, wherein the base layer is formed of a metal material such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), or Mo (molybdenum);

or an oxide thereof over the substrate by a method such as a sputtering method or an evaporation method.

2. A display device comprising:

a base layer comprising a metal material, and formed over a substrate;

a gate electrode formed over a first portion of the base layer;

a gate insulating film covering the gate electrode and the second portion of the base layer, the gate insulating film comprising a plurality of insulating layers;

a semiconductor layer formed over the gate insulating film, the semiconductor layer comprising a microcrystalline semiconductor;

source and drain regions formed over the semiconductor layer;

source and drain electrodes formed over the source and drain regions, respectively; and

a protective layer formed over source and drain electrodes;

wherein a top surface of the semiconductor layer has an etched portion;

wherein the second portion of the base layer is in contact with the first portion of the base layer; and

wherein the second portion of the base layer is insulated.

12. The display device according to claim 2, wherein a raman spectrum of Si—

Si conjunction of the semiconductor layer shifts to a side of lower wave number than 520 cm<sup>−

1</sup>.

13. The display device according to claim 2, further comprising scanning lines and signal lines over the substrate, wherein the scanning lines and the signal lines are controlled by external driver circuits.

14. The display device according to claim 2, further comprising at least one driver IC mounted over the substrate.

15. The display device according to claim 2, further comprising at least one driver circuit formed integrally over the substrate.

16. The display device according to claim 2, wherein the gate insulating film comprises a first silicon nitride layer, a silicon oxide layer, and a second silicon nitride layer.

17. The display device according to claim 2, further comprising a protective diode formed over the substrate.

18. The display device according to claim 2, wherein the protective layer comprises one of silicon nitride and silicon nitride oxide.

19. The display device according to claim 2, wherein the base layer is formed of a metal material such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), or Mo (molybdenum);

or an oxide thereof over the substrate by a method such as a sputtering method or an evaporation method.

3. A display device comprising:

a base layer comprising a metal material, and formed over a substrate;

a gate electrode formed over a first portion of the base layer;

a gate insulating film covering the gate electrode and the second portion of the base layer, the gate insulating film comprising a plurality of insulating layers;

a semiconductor layer formed over the gate insulating film, the semiconductor layer comprising a microcrystalline semiconductor;

an insulating layer formed over the semiconductor layer;

source and drain regions formed over the semiconductor layer and the plurality of insulating layers;

source and drain electrodes formed over the source and drain regions respectively; and

a protective layer formed over source and drain electrodes;

wherein the second portion of the base layer is in contact with the first portion of the base layer; and

wherein the second portion of the base layer is insulated.

20. The display device according to claim 3, wherein a raman spectrum of Si—

Si conjunction of the semiconductor layer shifts to a side of lower wave number than 520 cm<sup>−

1</sup>.

21. The display device according to claim 3, further comprising scanning lines and signal lines over the substrate, wherein the scanning lines and the signal lines are controlled by external driver circuits.

22. The display device according to claim 3, further comprising at least one driver IC mounted over the substrate.

23. The display device according to claim 3, further comprising at least one driver circuit formed integrally over the substrate.

24. The display device according to claim 3, wherein the gate insulating film comprises a first silicon nitride layer, a silicon oxide layer, and a second silicon nitride layer.

25. The display device according to claim 3, further comprising a protective diode formed over the substrate.

26. The display device according to claim 3, wherein the protective layer comprises one of silicon nitride and silicon nitride oxide.

27. The display device according to claim 3, wherein the base layer is formed of a metal material such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel), or Mo (molybdenum);

or an oxide thereof over the substrate by a method such as a sputtering method or an evaporation method.