Semiconductor device and manufacturing method thereof

• US 7,732,819 B2
• Filed: 08/01/2008
• Issued: 06/08/2010
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Honda, Tatsuya, Akimoto, Kengo, Sone, Norihito
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US12/184,418
• Publication Number:
  US 20080308804A1
• Time in Patent Office: 676 Days
• Field of Search: 257/72, 257/E33.001, 257/E33.004, 257/E33.013, 257/E21.347, 257/E21.349, 257/E21.129
• US Class Current: 257/72
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. An active matrix display device comprising:

a pixel portion including a thin film transistor having a multi-gate structure, the thin film transistor including;

a first gate electrode and a second gate electrode over a substrate wherein the first gate electrode and the second gate electrode are connected to each other;

an insulating film over the first gate electrode and the second gate electrode; and

an oxide semiconductor film over the first gate electrode and the second gate electrode with the insulating film interposed therebetween;

a source electrode and a drain electrode formed on the oxide semiconductor film; and

a pixel electrode electrically connected to one of the source electrode and the drain electrode,

wherein each of the source electrode and the drain electrode comprises a titanium film formed on the oxide semiconductor film,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

2. The active matrix display device according to claim 1 wherein the active matrix display device is a liquid crystal display device.

3. The active matrix display device according to claim 1 further comprising a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film in each of the source electrode and the drain electrode.

4. An active matrix display device comprising:

a scanning line formed over a substrate;

a signal line formed over the substrate across the scanning line;

a thin film transistor having a multi-gate structure, the thin film transistor including;

a first gate electrode and a second gate electrode over the substrate wherein the first gate electrode and the second gate electrode are connected to the scanning line;

an insulating film over the first gate electrode and the second gate electrode; and

an oxide semiconductor film over the first gate electrode and the second gate electrode with the insulating film interposed therebetween; and

a source electrode and a drain electrode formed over the oxide semiconductor film,

wherein one of the source electrode and the drain electrode is electrically connected to the signal line, and

wherein each of the source electrode and the drain electrode comprises a titanium film formed on the oxide semiconductor film,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

5. The active matrix display device according to claim 4 wherein the active matrix display device is a liquid crystal display device.

6. The active matrix display device according to claim 4 further comprising a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film in each of the source electrode and the drain electrode.

7. An active matrix display device comprising:

a scanning line formed over a substrate;

a signal line formed over the substrate across the scanning line;

at least two thin film transistors formed over the substrate, each of the two thin film transistors comprising an oxide semiconductor film; and

a pixel electrode formed over the substrate,

wherein the two thin film transistors are electrically connected to the pixel electrode in series, and a gate electrode of each of the two thin film transistors is electrically connected to the scanning line,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

8. The active matrix display device according to claim 7 wherein the active matrix display device is a liquid crystal display device.

9. An active matrix display device comprising:

a scanning line formed over a substrate;

a signal line formed over the substrate across the scanning line; and

at least two thin film transistors formed over the substrate, each of the two thin film transistors comprising an oxide semiconductor film,

wherein a gate electrode of each of the two thin film transistors is electrically connected to the scanning line, and the two thin film transistors are connected to the signal line in series,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

10. The active matrix display device according to claim 9 further comprising a pixel electrode wherein the two thin film transistors are electrically connected between the scanning line and the pixel electrode in series.

11. The active matrix display device according to claim 9 wherein the active matrix display device is a liquid crystal display device.

12. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film;

a first driver circuit electrically connected to the first thin film transistor; and

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween.

13. The active matrix display device according to claim 12 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

14. The active matrix display device according to claim 12 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

15. The active matrix display device according to claim 12 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

16. The active matrix display device according to claim 12 wherein the first thin film transistor has a multi-gate structure.

17. The active matrix display device according to claim 12 wherein the pixel electrode is electrically connected to one of the pair of electrodes.

18. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film;

a scanning line driver circuit electrically connected to the first gate electrode; and

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween.

19. The active matrix display device according to claim 18 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

20. The active matrix display device according to claim 18 wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

21. The active matrix display device according to claim 18 wherein the first thin film transistor has a multi-gate structure.

22. The active matrix display device according to claim 18 wherein the pixel electrode is electrically connected to the other one of the pair of electrodes.

23. The active matrix display device according to claim 18 wherein the active matrix display device is a liquid crystal display device.

24. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes, the passivation film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride;

a pixel electrode formed over the passivation film;

a first driver circuit electrically connected to the first thin film transistor; and

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween.

25. The active matrix display device according to claim 24 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

26. The active matrix display device according to claim 24 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

27. The active matrix display device according to claim 24 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

28. The active matrix display device according to claim 24 wherein the first thin film transistor has a multi-gate structure.

29. The active matrix display device according to claim 24 wherein the pixel electrode is electrically connected to one of the pair of electrodes.

30. The active matrix display device according to claim 24 wherein the active matrix display device is a liquid crystal display device.

31. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes, the passivation film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride;

a pixel electrode formed over the passivation film;

a scanning line driver circuit electrically connected to the first gate electrode; and

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween.

32. The active matrix display device according to claim 31 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

33. The active matrix display device according to claim 31 wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

34. The active matrix display device according to claim 31 wherein the first thin film transistor has a multi-gate structure.

35. The active matrix display device according to claim 31 wherein the pixel electrode is electrically connected to the other one of the pair of electrodes.

36. The active matrix display device according to claim 31 wherein the active matrix display device is a liquid crystal display device.

37. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film;

a first driver circuit electrically connected to the first thin film transistor; and

a second driver circuit electrically connected to the first thin film transistor;

wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises a material selected from the group consisting of zinc oxide, magnesium zinc oxide, cadmium zinc oxide, cadmium oxide, InGaO₃(ZnO)₅, and an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

38. The active matrix display device according to claim 37 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

39. The active matrix display device according to claim 37 wherein the other one of the first driver circuit and the second driver circuit is mounted by a COG method.

40. The active matrix display device according to claim 37 wherein the other one of the first driver circuit and the second driver circuit is mounted by a TAB method.

41. The active matrix display device according to claim 37 wherein the first thin film transistor has a multi-gate structure.

42. The active matrix display device according to claim 37 wherein the pixel electrode is electrically connected to one of the pair of electrodes.

43. The active matrix display device according to claim 37 wherein the active matrix display device is a liquid crystal display device.

44. An active matrix display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first insulating film over the first gate electrode; and

a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween,

a pair of electrodes formed over the first oxide semiconductor film;

a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes;

a pixel electrode formed over the passivation film;

a scanning line driver circuit electrically connected to the first gate electrode; and

a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method and a TAB method;

wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including;

a second gate electrode over the substrate;

a second insulating film over the second gate electrode; and

a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises a material selected from the group consisting of zinc oxide, magnesium zinc oxide, cadmium zinc oxide, cadmium oxide, InGaO₃(ZnO)₅, and an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

45. The active matrix display device according to claim 44 wherein each of the first and second oxide semiconductor films comprises an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

46. The active matrix display device according to claim 44 wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film.

47. The active matrix display device according to claim 44 wherein the first thin film transistor has a multi-gate structure.

48. The active matrix display device according to claim 44 wherein the pixel electrode is electrically connected to the other one of the pair of electrodes.

49. The active matrix display device according to claim 44 wherein the active matrix display device is a liquid crystal display device.