Patterned light emitting devices
First Claim
1. A light-emitting device, comprising:
- a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer,wherein the light-emitting device has an edge which is at least about one millimeter long, and the light-emitting device is designed so that a quantum efficiency of the light-emitting device is substantially independent of the length of the edge of the length of the edge.
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Abstract
Light-emitting devices, and related components, systems and methods are disclosed. A light-emitting device can include a multi-layer stack of materials that includes a light-generating region and a first layer supported by the light-generating region. During use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer. The surface of the first layer can have a dielectric function that varies spatially as a pattern and at least about 45% of a total amount of light generated by the light-generating region can emerge from the light-emitting device emerges via the surface of the light-emitting device.
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Citations
20 Claims
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1. A light-emitting device, comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer, wherein the light-emitting device has an edge which is at least about one millimeter long, and the light-emitting device is designed so that a quantum efficiency of the light-emitting device is substantially independent of the length of the edge of the length of the edge.
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2. A light-emitting device, comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer, wherein the light-emitting device has an edge which is at least about one millimeter long, and the light-emitting device is designed so that a wall plug efficiency of the light-emitting device is substantially independent of the length of the edge of the length of the edge.
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3. A light-emitting device, comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer, wherein the light-emitting device has an edge which is at least about one millimeter long, and the light-emitting device is designed so that an extraction efficiency of the light-emitting device is substantially independent of the length of the edge of the length of the edge.
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4. The light-emitting device of claim 3, wherein the length of the edge is at least about two millimeters.
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5. The light-emitting device of claim 3, wherein the length of the edge is at least about three millimeters.
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6. The light-emitting device of claim 3, wherein the light-emitting device includes at least one additional edge having a length of at least about one millimeter.
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7. The light-emitting device of claim 3, wherein at least about 90% of the total amount of light generated by the light-generating region that emerges from the light-emitting device emerges from the light-emitting device via the surface of the first layer.
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8. The light-emitting device of claim 3, wherein the multi-layer stack of materials comprises a multi-layer stack of semiconductor materials.
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9. The light-emitting device of claim 8, wherein the first layer comprises a layer of n-doped semiconductor material, and the multi-layer stack further includes a layer of p-doped semiconductor material.
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10. The light-emitting device of claim 9, wherein the light-generating region is between the layer of n-doped semiconductor material and the layer of p-doped semiconductor material.
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11. The light-emitting device of claim 3, further comprising a support that supports the multi-layer stack of materials.
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12. The light-emitting device of claim 11, further comprising a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, the layer of reflective material being between the support and the multi-layer stack of materials.
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13. The light-emitting device of claim 12, wherein the first layer comprises a layer of an n-doped material, the multi-layer stack of materials further includes a layer of p-doped material, and a distance between the layer of p-doped semiconductor material and the layer of reflective material is less than a distance between the layer of n-doped semiconductor material and the layer of reflective material.
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14. The light-emitting device of claim 3, further including a current-spreading layer between the first layer and the light-generating region.
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15. The light-emitting device of claim 3, wherein the multi-layer stack of materials comprise semiconductor materials.
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16. The light-emitting device of claim 3, further comprising electrical contacts configured to inject current into the light-emitting device.
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17. The light-emitting device of claim 16, wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.
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18. The light-emitting device of claim 3, wherein the light-emitting device comprises a light emitting diode.
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19. The light-emitting device of claim 3, wherein the light-emitting device is in the form of a packaged light-emitting device.
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20. The light-emitting device of claim 3, wherein a surface of the first layer includes topological features that enhance light extraction.
Specification