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Memory system, memory device, and output data strobe signal generating method

  • US 7,733,715 B2
  • Filed: 02/20/2008
  • Issued: 06/08/2010
  • Est. Priority Date: 10/19/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor memory device, comprising:

  • a command decoder configured to decode a read signal, a dummy read signal, and a mode setting signal;

    a mode setting portion configured to set a burst length signal and a CAS latency signal in response to the mode setting signal; and

    a preamble cycle calculator configured to generate a preamble cycle signal based on a calculated preamble cycle number.

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