Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs

• US 7,735,052 B2
• Filed: 08/14/2006
• Issued: 06/08/2010
• Est. Priority Date: 04/24/2001
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools Netherlands B.V. (ASML Holding NV)
• Inventors: Chen, Jang Fung, Hsu, Duan-Fu Stephen, Shi, Xuelong
• Primary Examiner(s): Chiang; Jack
• Assistant Examiner(s): Tat; Binh C
• Application Number:
  US11/503,302
• Publication Number:
  US 20060277522A1
• Time in Patent Office: 1,394 Days
• Field of Search: 716 19- 21
• US Class Current: 716/53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

Claims

1. A computer-implemented method of identifying an extreme interaction pitch region when designing a mask pattern for transferring a lithographic pattern onto a substrate by use of a lithographic apparatus, said method comprising the steps of:

(a) determining a first pitch between certain features in said mask pattern and a first illumination map of an illumination source of said lithographic apparatus,

(b) determining an illumination intensity at an image plane of said lithographic apparatus corresponding to said first pitch of said certain features and said first illumination map,

(c) repeating steps (a) and (b) after varying one or more of said first pitch and said first illumination map;

(d) identifying one or more extreme interaction pitch regions based on a plurality of determined illumination intensities from step (c); and

(e) adjusting the mask pattern based on the identified one or more extreme interaction pitch regions,

wherein steps (a) to (e) are implemented by the computer.

2. A method according to claim 1, wherein said illumination map causes illumination of said mask pattern at a second illumination angle that exhibits a 90 degree rotational symmetry with respect to a first illumination angle.

3. A method according to claim 1, wherein step (d) includes identifying a pitch region that is a range of pitches within ±

0.12×

λ

/NA of a specified pitch, wherein λ

is a wavelength of exposure radiation of said lithographic apparatus and NA is a numeric aperture of a projection system of said lithographic apparatus.

4. A method according to claim 1, further comprising the steps of, for a given pitch identified as being in an extreme interaction pitch region:

(f) determining an illumination intensity for said given pitch and a first illumination angle,

(g) determining an illumination intensity for said given pitch and a second illumination angle, said second illumination angle being rotationally symmetric with respect to said first illumination angle,

(h) determining a second total illumination intensity for said given pitch by combining the illumination intensity associated with said first illumination angle and said second illumination angle,

(i) determining the log-slope of said second total illumination intensity,

(j) identifying a given illumination angle as being undesirable for said given pitch if said log-slope of said second total illumination intensity is less than a predetermined value, and

(k) repeating steps (f)-(j) for a plurality of different illumination angles.

5. A method according to claim 4 wherein said predetermined value is 15.

6. A method of designing a mask pattern for transferring a lithographic pattern onto a substrate by use of a lithographic apparatus with a desired illumination scheme, said method comprising:

identifying extreme interaction pitch regions and corresponding undesirable illumination angles according to the method of claim 4; and

wherein step (e) includes designing said mask pattern by arranging features such that no combination of features in said mask pattern has a pitch in an extreme interaction pitch region for which illumination angles in said desired illumination scheme are undesirable.

7. A method according to claim 6 wherein said mask pattern includes main features and optical proximity correction elements and said step of designing includes positioning said optical proximity correction elements so as not to create pitches between main features and optical proximity correction elements that fall in an extreme interaction pitch region for which illumination angles in said desired illumination scheme are undesirable.

8. A method of manufacturing a mask comprising the steps of:

designing a mask pattern according to the method of claim 6; and

manufacturing a mask embodying the designed mask pattern.

9. A device manufacturing method comprising the steps of:

providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

providing a projection beam of radiation using a radiation system;

using patterning means to endow the projection beam with a pattern in its cross-section;

projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, characterized by;

identifying extreme interaction pitch regions in said desired pattern according to the method of claim 1;

creating illumination maps for said extreme interaction pitch regions in said desired pattern, said illumination map comprising the log-shape of said total illumination intensity as a function of illumination angle; and

identifying favorable illumination angles from said illumination maps;

wherein in said step of providing a projection beam, said projection beam is arranged to illuminate said mask substantially only at angles identified as favorable illumination angles in all said illumination maps.

10. The device manufacturing method according to claim 9 wherein:

in said step of identifying extreme interaction pitch regions, at least first and second extreme interaction pitch regions are identified;

in said step of identifying favorable illumination angles, first and second sets of favorable illumination angles for said first and second extreme interaction pitch regions are identified; and

wherein said steps of providing a projection beam, using patterning means and projecting the patterned beam, are performed twice, once using said first set of favorable illumination angles and once using said second set.

11. The device manufacturing method according to claim 10 wherein said step of identifying favorable illumination angles comprises identifying the illumination angles having the highest values of log-shape of illumination intensity.

12. The device manufacturing method according to claim 10 wherein said step of identifying favorable illumination angles comprises identifying the illumination angles having a value of log-shape of illumination intensity higher than a predetermined amount.

13. A computer program comprising program code means that, when executed on a computer, instruct the computer to perform the method of claim 1.

14. A computer program comprising program code means that, when executed on a computer, instruct the computer to perform the method of claim 4.

15. A computer program comprising program code means for controlling a lithographic apparatus to perform the method of claim 9.

16. A method according to claim 1, wherein said extreme interaction pitch regions define regions which exhibit either substantial constructive optical interference or substantial destructive optical interference.