Apparatus for manufacturing a process abatement reactor

• US 7,736,600 B2
• Filed: 10/31/2006
• Issued: 06/15/2010
• Est. Priority Date: 10/31/2005
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Clark, Daniel O., Raoux, Sebastien, Crawford, Shaun W., Vermeulen, Robbert M.
• Primary Examiner(s): BHAT, NINA NMN
• Application Number:
  US11/555,056
• Publication Number:
  US 20070172398A1
• Time in Patent Office: 1,323 Days
• Field of Search: 422/171, 422/172, 422/173, 110/238, 431/353
• US Class Current: 422/171
• CPC Class Codes: B01D 2251/104 Ozone
• CPC Class Codes: B01D 2251/106 Peroxides
• CPC Class Codes: B01D 2251/2062 Ammonia
• CPC Class Codes: B01D 2258/0216 from CVD treatment or semi-conductor manufacturing
• CPC Class Codes: B01D 53/38 Removing components of undefined structure
• CPC Class Codes: B01D 53/68 Halogens or halogen compounds
• CPC Class Codes: B01D 53/74 General processes for purification of waste gases; Apparatus or devices specially adapted therefor B01D53/92 takes precedence
• CPC Class Codes: B01D 53/79 Injecting reactants
• CPC Class Codes: B01D 53/8659 Removing halogens or halogen compounds
• CPC Class Codes: B01D 53/8662 Organic halogen compounds
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: F23C 7/02 Disposition of air supply not passing through burner to obtain a cyclonic tapering flame when burning pulverulent fuel F23C5/32
• CPC Class Codes: F23D 2900/00016 Preventing or reducing deposit build-up on burner parts, e.g. from carbon
• CPC Class Codes: F23G 7/065 using gaseous or liquid fuel
• CPC Class Codes: F23M 5/00 Casings; Linings; Walls

Abstract

A thermal reactor for use during the abatement of a semiconductor manufacturing process is provided, including a thermal reaction unit having: an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; at least one gas inlet in fluid communication with the central chamber and adapted to introduce gaseous waste stream to the central chamber; a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber; wherein at least one of the porous sections has one or more of: a property that varies within the porous section; and a property that differs from a property of at least one other porous section of the interior porous wall.

Claims

1. A thermal reactor for use during the abatement of a semiconductor manufacturing process comprising:

a thermal reaction unit having;

an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections;

at least one gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber;

a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and

a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber;

wherein at least one of the porous sections has one or more of;

a property that varies within the porous section; and

a property that differs from a property of at least one other porous section of the interior porous wall.

2. The thermal reactor of claim 1 wherein the thermal reaction unit is formed from at least eight porous ceramic rings.

3. The thermal reactor of claim 1 wherein the thermal reaction unit is formed from about eleven porous ceramic rings.

4. The thermal reactor of claim 1 wherein the porous sections have a shape selected from the group consisting of round, elliptical, triangular, square, rectangular, polygonal, pentagonal, hexagonal and octagonal.

5. The thermal reactor of claim 1 wherein the porous sections are selected from the group consisting of stackable washers, chevrons and rings.

6. The thermal reactor of claim 1 wherein at least one of the porous sections comprises a non-rigid material.

7. The thermal reactor of claim 1 wherein at least one of the porous sections has a graded coefficient of thermal expansion (CTE).

8. The thermal reactor of claim 7 wherein at least one of the porous sections comprises yttria doped aluminum fiber.

9. The thermal reactor of claim 8 wherein at least one of the porous sections has a CTE that increases from a top to a bottom of the porous section.

10. The thermal reactor of claim 8 wherein at least one of the porous sections has a CTE that increases from an inside to an outside of the porous section.

11. The thermal reactor of claim 1 wherein at least one of the porous sections has at least one of a pore size, pore shape and pore density that varies within the porous section.

12. The thermal reactor of claim 1 wherein at least one of the porous sections has pores that are at least one of tapered and conical.

13. The thermal reactor of claim 1 wherein at least one of the porous sections has at least one of a composition, dopant type and dopant concentration that varies within the porous section.

14. The thermal reactor of claim 1 wherein at least one of the porous sections comprises at least one of a ceramic, a sintered ceramic, a sintered metal, a porous metal material, doped aluminum fiber, glass and a porous polymeric material.

15. The thermal reactor of claim 1 wherein at least one of the porous sections comprises at least one of MgAl₂O₄, Al₂O₃, SiC, and MgO.

16. The thermal reactor of claim 1 wherein at least one of the porous sections comprises a doped ceramic.

17. The thermal reactor of claim 16 wherein at least one of the porous sections comprises a ceramic doped with one or more of yttria, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

18. The thermal reactor of claim 1 wherein a first of the porous sections has a first coefficient of thermal expansion (CTE) and a second of the porous sections has a second CTE.

19. The thermal reactor of claim 18 wherein the first porous section is positioned near an inlet of the thermal reaction unit and wherein the first CTE of the first porous section is smaller than the second CTE of the second porous section.

20. The thermal reactor of claim 1 wherein each porous section has a different CTE.

21. The thermal reactor of claim 1 wherein a first of the porous sections has a first purity level and a second of the porous sections has a second purity level.

22. The thermal reactor of claim 21 wherein the first porous section is positioned near an inlet of the thermal reaction unit and wherein the first purity level of the first porous section is greater than the second purity level of the second porous section.

23. The thermal reactor of claim 1 wherein a first of the porous sections has a first doping level and a second of the porous sections has a second doping level.

24. The thermal reactor of claim 1 wherein at least one of a CTE, a purity level and a doping level of each porous section is selected based on a temperature profile within the thermal reaction unit during abatement.

25. The thermal reactor of claim 1 wherein at least one of a CTE, a purity level and a doping level of each porous section is selected so that expansion of each porous section is approximately equal within the thermal reaction unit during abatement.