Coated substrates and methods for their preparation

• US 7,736,728 B2
• Filed: 08/12/2005
• Issued: 06/15/2010
• Est. Priority Date: 08/18/2004
• Status: Expired due to Fees

• Current Assignee: Dow Silicones Corporation (Dow, Inc.)
• Original Assignee: Dow Corning Corporation (Dow, Inc.)
• Inventors: Weidner, William, Zambov, Ludmil, Snow, Steven, Loboda, Mark
• Primary Examiner(s): McNeil; Jennifer
• Assistant Examiner(s): Katz; Vera
• Application Number:
  US11/629,065
• Publication Number:
  US 20090053491A1
• Time in Patent Office: 1,768 Days
• Field of Search: None
• US Class Current: 428/218
• CPC Class Codes: C23C 28/322 only coatings of metal elements only
• CPC Class Codes: C23C 28/34 including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
• CPC Class Codes: C23C 28/341 with at least one carbide layer
• CPC Class Codes: C23C 28/345 with at least one oxide layer
• CPC Class Codes: C23C 28/3455 with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
• CPC Class Codes: C23C 28/42 characterized by the composition of the alternating layers
• CPC Class Codes: C23C 28/44 characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/24992 Density or compression of components

Abstract

Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm³ and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.

Claims

1. A coated substrate, consisting of:

a substrate;

a first barrier layer on the substrate, wherein the first barrier layer comprises hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm³; and

at least two alternating buffer and barrier layers on the first barrier layer, wherein each alternating buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm³, and each alternating barrier layer is independently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm³, aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, provided at least one alternating barrier layer is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.

2. The coated substrate according to claim 1, wherein the coated substrate comprises from 2 to 16 alternating buffer and barrier layers on the first barrier layer.

3. The coated substrate according to claim 1, wherein the hydrogenated silicon oxycarbide of the first barrier layer and the alternating barrier layers has a density of from 1.7 to 2.5 g/cm³.

4. The coated substrate according to claim 1, wherein the first barrier layer and the alternating buffer and barrier layers each have a thickness of from 0.2 to 10 μ

m.

5. The coated substrate according to claim 1, wherein the hydrogenated silicon oxycarbide of the alternating buffer layers has a density of from 1.0 to 1.5 g/cm³.

6. A coated substrate, consisting of:

a substrate;

a first buffer layer on the substrate, wherein the first buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm³; and

at least three alternating barrier and buffer layers on the first buffer layer, wherein each alternating barrier layer is independently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm³, aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, and each alternating buffer layer comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm³, provided at least one alternating barrier layer is hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm³, and at least one alternating barrier layer is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.

7. The coated substrate according to claim 6, wherein the coated substrate comprises from 3 to 10 alternating barrier and buffer layers on the first buffer layer.

8. The coated substrate according to claim 6, wherein the hydrogenated silicon oxycarbide of the first buffer layer and the alternating buffer layers has a density of from 1.0 to 1.5 g/cm³.

9. The coated substrate according to claim 6, wherein the first buffer layer and the alternating barrier and buffer layers each have a thickness of from 0.2 to 10 μ

m.

10. The coated substrate according to claim 6, wherein the hydrogenated silicon oxycarbide of the alternating barrier layers has a density of from 1.7 to 2.5 g/cm³.