Photomask blank, photomask, and method of manufacture

• US 7,736,824 B2
• Filed: 12/07/2007
• Issued: 06/15/2010
• Est. Priority Date: 03/31/2003
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Yoshikawa, Hiroki, Okazaki, Satoshi, Inazuki, Yukio, Fukushima, Noriyasu, Kaneko, Hideo
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US11/952,283
• Publication Number:
  US 20080090159A1
• Time in Patent Office: 921 Days
• Field of Search: 430/5, 430/394, 378/35, 204/192.1, 204/192.11, 204/192.12, 428/428, 428/430
• US Class Current: 430/5
• CPC Class Codes: C23C 14/0084 Producing gradient compositions
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/0682 Silicides
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/3492 Variation of parameters during sputtering
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: Y10T 428/31616 Next to polyester [e.g., alkyd]

Abstract

A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.

Claims

1. A phase shift mask blank, comprising:

a substrate which is transparent to exposure light; and

a phase shift film disposed on the substrate, said phase shift film having one side contacting the substrate and a surface side remote therefrom, wherein

said phase shift film consists of one of metal silicide oxide, metal silicide nitride and metal silicide oxynitride, and

said phase shift film comprises a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side.

2. The phase shift mask blank of claim 1 wherein said metal is molybdenum.

3. The phase shift mask blank of claim 2 wherein in said phase shift film, the plurality of layers are stacked such that the compositional ratio of silicon to molybdenum increases from the substrate side to the surface side.

4. The phase shift mask blank of claim 1 wherein a phase difference distribution in a substrate plane at the wavelength of light used for exposure has a center value of 180±

10 degrees, and a transmittance distribution in a substrate plane has a center value of 3 to 40%.

5. The phase shift mask blank of claim 4 wherein the phase difference distribution in a substrate plane at the wavelength of light used for exposure is within ±

2.0 degrees relative to its center value, and the transmittance distribution in a substrate plane is within ±

0.15% relative to its center value.

6. A method for manufacturing the phase shift mask blank of claim 1, comprising

using a sputtering system capable of simultaneously causing at least two targets to produce electric discharges, and

sputtering a combination of at least two metal silicide targets, or a combination of at least one metal silicide target with a metal target or a silicon target or both, thereby depositing layers on the substrate to form the phase shift film.

7. The method of claim 6 wherein the sputtering is reactive sputtering using a reactive gas, and

said phase shift film comprises one of metal silicide oxide, metal silicide nitride, metal silicide oxynitride, metal silicide oxycarbide, metal silicide nitride carbide and metal silicide oxide nitride carbide.

8. The method of claim 6 wherein said metal is molybdenum.

9. The method of claim 8 wherein in said phase shift film, the plurality of layers are stacked such that the compositional ratio of silicon to molybdenum increases from the substrate side to the surface side.

10. A phase shift mask fabricated by patterning the phase shift film of the phase shift mask blank of claim 1.

11. A method for manufacturing a phase shift mask, comprising

forming a resist film pattern on the phase shift film of the phase shift mask blank of claim 1 by lithography,

etching away those portions of the phase shift film which are not covered with the resist film, and

removing the resist film.