Method for manufacturing photoelectric conversion device
First Claim
1. A method for manufacturing a photoelectric conversion device comprising:
- supplying a reactive gas containing helium to a treatment chamber having a plurality of waveguides which are juxtaposed so as to be projected in a comb-shape; and
forming a photoelectric conversion layer of a microcrystalline semiconductor over a substrate placed in the treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa.
1 Assignment
0 Petitions
Accused Products
Abstract
To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.
48 Citations
20 Claims
-
1. A method for manufacturing a photoelectric conversion device comprising:
-
supplying a reactive gas containing helium to a treatment chamber having a plurality of waveguides which are juxtaposed so as to be projected in a comb-shape; and forming a photoelectric conversion layer of a microcrystalline semiconductor over a substrate placed in the treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A method for manufacturing a photoelectric conversion device comprising:
-
supplying a reactive gas containing helium to a first treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape; forming a first photoelectric conversion layer of a microcrystalline semiconductor over a substrate placed in the first treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the first treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa;transferring the substrate from the first treatment chamber into a second treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air; supplying a reactive gas containing helium to the second treatment chamber; forming a second photoelectric conversion layer of a microcrystalline semiconductor over the first photoelectric conversion layer placed in the second treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the second treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa;transferring the substrate from the second treatment chamber into a third treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air; supplying a reactive gas containing helium to the third treatment chamber; and forming a third photoelectric conversion layer of a microcrystalline semiconductor over the second photoelectric conversion layer placed in the third treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the third treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A method for manufacturing a semiconductor device comprising:
-
supplying a reactive gas containing helium to a treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape; and forming a semiconductor layer of a microcrystalline semiconductor over a substrate placed in the treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A method for manufacturing a semiconductor device comprising:
-
supplying a reactive gas containing helium to a first treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape; forming a first semiconductor layer of a microcrystalline semiconductor over a substrate placed in the first treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the first treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa;transferring the substrate from the first treatment chamber into a second treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air; supplying a reactive gas containing helium to the second treatment chamber; forming a second semiconductor layer of a microcrystalline semiconductor over the first semiconductor layer placed in the second treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the second treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa;transferring the substrate from the second treatment chamber into a third treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air; supplying a reactive gas containing helium to the third treatment chamber; and forming a third semiconductor layer of a microcrystalline semiconductor over the second semiconductor layer placed in the third treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the third treatment chamber at equal to or greater than 1×
102 Pa and equal to or less than 1×
105 Pa. - View Dependent Claims (17, 18, 19, 20)
-
Specification