Process for producing a photoelectric conversion device
First Claim
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1. A process for producing a photoelectric conversion device, comprising:
- forming a first semiconductor film having an amorphous structure including boron;
adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
conducting a first heat treatment to form a first semiconductor film having a crystal structure;
forming a second semiconductor film containing a rare gas element over the first semiconductor film having the crystal structure;
conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film;
removing the second semiconductor film;
forming an n-type crystalline silicon film over the first semiconductor film;
forming a transparent electrode over the n-type crystalline silicon film;
removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and
forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode,wherein the second heat treatment is conducted by rapid thermal annealing.
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Abstract
A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.
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Citations
69 Claims
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1. A process for producing a photoelectric conversion device, comprising:
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forming a first semiconductor film having an amorphous structure including boron; adding an element for promoting crystallization to the first semiconductor film having the amorphous structure; conducting a first heat treatment to form a first semiconductor film having a crystal structure; forming a second semiconductor film containing a rare gas element over the first semiconductor film having the crystal structure; conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film; removing the second semiconductor film; forming an n-type crystalline silicon film over the first semiconductor film; forming a transparent electrode over the n-type crystalline silicon film; removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode, wherein the second heat treatment is conducted by rapid thermal annealing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 45, 50, 51, 52, 53)
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10. A process for producing a photoelectric conversion device, comprising:
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forming a first semiconductor film having an amorphous structure including boron; adding an element for promoting crystallization to the first semiconductor film having the amorphous structure; conducting a first heat treatment to form a first semiconductor film having a crystal structure; forming a barrier layer over a surface of the first semiconductor film having the crystal structure; forming a second semiconductor film containing a rare gas element over the barrier layer, conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film, removing the second semiconductor film; forming an n-type crystalline silicon film over the first semiconductor film; forming a transparent electrode over the n-type crystalline silicon film; removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode, wherein the second heat treatment is conducted by rapid thermal annealing. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 46, 54, 55, 56, 57)
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22. A process for producing a photoelectric conversion device, comprising:
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forming a first semiconductor film having an amorphous structure including boron; adding an element for promoting crystallization to the first semiconductor film having the amorphous structure; conducting a first heat treatment to form a first semiconductor film having a crystal structure; forming a second semiconductor film over the first semiconductor film having the crystal structure; adding a rare gas element to the second semiconductor film; conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film, removing the second semiconductor film; forming an n-type crystalline silicon film over the first semiconductor film; forming a transparent electrode over the n-type crystalline silicon film; removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode, wherein the second heat treatment is conducted by rapid thermal annealing. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 47, 58, 59, 60, 61)
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30. A process for producing a photoelectric conversion device, comprising:
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forming a first semiconductor film having an amorphous structure including boron; adding an element for promoting crystallization to the first semiconductor film having the amorphous structure; conducting a first heat treatment to form a first semiconductor film having a crystal structure; forming a barrier layer over a surface of the first semiconductor film having the crystal structure; forming a second semiconductor film over the barrier layer; adding a rare gas element to the second semiconductor film; conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film; removing the second semiconductor film; forming an n-type crystalline silicon film over the first semiconductor film; forming a transparent electrode over the n-type crystalline silicon film; removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode, wherein the second heat treatment is conducted by rapid thermal annealing. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 48, 62, 63, 64, 65)
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41. A process for producing a photoelectric conversion device, comprising:
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forming a first semiconductor film having an amorphous structure including boron; adding an element for promoting crystallization to the first semiconductor film having the amorphous structure; conducting a first heat treatment to form a first semiconductor film having a crystal structure; forming a second semiconductor film over the first semiconductor film having the crystal structure, wherein a rare gas element is added to the second semiconductor film; conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film; removing the second semiconductor film; forming an n-type crystalline silicon film over the first semiconductor film; forming a transparent electrode over the n-type crystalline silicon film; removing a part of the transparent electrode, a part of the n-type crystalline silicon film, and a part of the first semiconductor film having the crystal structure to expose the first semiconductor film having the crystal structure; and forming a positive electrode onto the first semiconductor film having the crystal structure and a negative electrode onto the transparent electrode, wherein the second heat treatment is conducted by rapid thermal annealing. - View Dependent Claims (42, 43, 44, 49, 66, 67, 68, 69)
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Specification