Method of manufacturing a trench transistor having a heavy body region

• US 7,736,978 B2
• Filed: 08/10/2006
• Issued: 06/15/2010
• Est. Priority Date: 11/14/1997
• Status: Expired due to Fees

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Mo, Brian Sze-Ki, Chau, Duc, Sapp, Steven, Bencuya, Izak, Probst, Dean Edward
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): Garcia, Joannie A
• Application Number:
  US11/503,506
• Publication Number:
  US 20070042551A1
• Time in Patent Office: 1,405 Days
• Field of Search: 438/270, 438/272, 438/301, 438/305, 438/306, 438/589, 438/FOR.188, 438/303, 438/514, 438/519, 438/526, 438/527, 438/96
• US Class Current: 438/270
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0869 Shape cell layout H01L29/0696
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Claims

1. A method of manufacturing a trench transistor comprising:

forming a plurality of trenches defined by a corresponding plurality of semiconductor mesas, a height of the plurality of mesas defining a depth of the plurality of trenches, the mesas having dopants of the first conductivity type;

lining each of the plurality of trenches with a thin layer of gate dielectric material;

substantially filling each dielectric-lined trench with conductive material to form a gate electrode of the transistor;

forming a doped well in the plurality of mesas to a depth that is less than the depth of the plurality of trenches, the doped well having dopants of a second conductivity type opposite to said first conductivity type;

forming a source region inside the doped well and extending to a depth that is less than the depth of the well, the source region having dopants of the first conductivity type;

forming a heavy body structure inside the doped well, the heavy body structure including a region having dopants of the second conductivity type with a peak concentration occurring at a peak concentration depth below the depth of the source region and above the depth of the doped well;

forming a contact area on the surface of the plurality of mesas;

wherein forming a plurality of trenches comprises patterning and etching the plurality of trenches that extend in parallel along a longitudinal axis; and

wherein the step of forming the contact area comprises forming a ladder-shaped source contact region surrounding heavy body contact regions.

2. The method of claim 1 wherein the step of forming the ladder-shaped source contact region surrounding heavy body contact regions, comprises:

forming a source blocking mask on the surface of the plurality of mesas patterned to cover the heavy body contact regions; and

implanting dopants of the first conductivity type to form the ladder-shaped source contact region.

3. The method of claim 1 wherein the step of forming the ladder-shaped source contact region surrounding heavy body contact regions, comprises forming a dielectric layer on the surface of the plurality of mesas patterned to expose the heavy body contact regions.

4. A method of manufacturing a trench transistor comprising:

providing a semiconductor substrate having dopants of a first conductivity type, the semiconductor substrate including a first highly doped drain layer and a second more lightly and substantially uniformly doped epitaxial layer atop and adjacent the first layer;

forming a plurality of trenches extending to a first depth into the epitaxial layer, the plurality of trenches creating a respective plurality of epitaxial mesas;

lining each of the plurality of trenches with a gate dielectric material;

substantially filling each dielectric-lined trench with conductive material;

forming a plurality of doped wells in the plurality of epitaxial mesas, respectively, to a second depth that is less than said first depth of the plurality of trenches, the plurality of doped wells having dopants of a second conductivity type opposite to said first conductivity type;

forming a plurality of source regions adjacent the plurality of trenches and inside the plurality of doped wells, the source regions having a third depth and dopants of the first conductivity type;

forming a plurality of heavy body structures each inside a respective one of the plurality of doped wells, each heavy body structure including a region having dopants of the second conductivity type with a peak concentration occurring at a peak concentration depth below the depth of the source region and above the depth of the doped well,

whereby, peak electric field is moved away from a nearby trench toward the region having dopants of the second conductivity type resulting in avalanche current that is substantially uniformly distributed.

5. The method of claim 4 wherein the step of forming the plurality of heavy body structures comprises a double implant process.

6. The method of claim 5 wherein the double implant process comprises:

a first implant of dopants of the first conductivity type, at a first energy level and a first dosage to form a first doped portion of the heavy body; and

a second implant of dopants of the first conductivity type, at a second energy level and a second dosage to form a second doped portion of the heavy body.

7. The method of claim 6 wherein the first implant occurs at approximately the fourth depth.

8. The method of claim 6 wherein the first energy level is higher than the second energy level.

9. The method of claim 8 wherein the first dosage is higher than the second dosage.

10. The method of claim 4 wherein the step of forming the plurality of heavy body structures comprises implanting dopants of the second conductivity type at about the peak concentration depth.