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Method of forming nanotube vertical field effect transistor

  • US 7,736,979 B2
  • Filed: 06/20/2007
  • Issued: 06/15/2010
  • Est. Priority Date: 06/20/2007
  • Status: Expired due to Fees
First Claim
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1. A method of forming a nanotube field effect transistor (FET), comprising:

  • providing a multi-layer stack having materials in an order of;

    a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer;

    forming a first aperture in at least a top portion of the second insulating layer;

    forming a second aperture in the second conductive layer and the first insulating layer to expose a region of the first conductive layer, the second aperture being centrally aligned with respect to the first aperture and having a diameter smaller than a diameter of the first aperture;

    generating an electric field proximate to the first aperture, the electric field configured to direct a plurality of nanotubes towards the exposed region of the first conductive layer;

    depositing a first nanotube on the exposed region of the first conductive layer by electrophoresis, with a first end of the first nanotube contacting the exposed region of the first conductive layer proximate a center of the exposed region of the first conductive layer;

    wherein the first aperture and the second aperture are sized to allow the plurality of nanotubes to contact the exposed region of the first conductive layer; and

    wherein after the first nanotube is deposited, the deposited first nanotube re-configures the electric field to thereby prevent other nanotubes from the plurality of nanotubes from being deposited on the exposed region of the first conductive layer.

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