Process of forming an electronic device including forming a gate electrode layer and forming a patterned masking layer
First Claim
1. A process of forming an electronic device comprising:
- forming a gate electrode layer over a substrate, wherein forming the gate electrode layer includes;
forming a first electrode layer over the substrate and having a first composition and a first thickness; and
forming a second electrode layer after forming the first electrode layer and having a second composition different from the first composition and having a second thickness greater than the first thickness;
forming a patterned masking layer including a masking member and an opening, wherein;
the masking member overlies a first region of the substrate; and
the opening overlies a second region of the substrate;
removing an upper portion of the gate electrode layer to form a lower portion of the gate electrode layer overlying the second region of the substrate that includes the first electrode layer and a remaining portion of the second electrode layer, wherein the lower portion of the gate electrode layer has a third thickness greater than the first thickness;
performing a process operation other than removing substantially all of the lower portion of the gate electrode layer; and
removing substantially all of the lower portion of the gate electrode layer overlying the second region of the substrate to form a gate electrode overlying the first region of the substrate, wherein removing substantially all of the lower portion of the gate electrode layer is performed after performing the process operation.
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Accused Products
Abstract
A process of forming an electronic device can include forming a gate electrode layer and forming a patterned masking layer. In a first aspect, a process operation is performed before removing substantially all of a lower portion of the gate electrode layer. In a second aspect, a gate dielectric layer is formed prior to forming the gate electrode layer, and a portion of the gate dielectric layer is exposed after removing the patterned masking layer and prior to forming another masking layer. A portion of the gate electrode layer remains covered during a process where some or all of the portion would be otherwise removed or consumed. By forming the electronic device using such a process, damage to the gate electrode structure while performing subsequent processing can be significantly reduced.
13 Citations
20 Claims
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1. A process of forming an electronic device comprising:
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forming a gate electrode layer over a substrate, wherein forming the gate electrode layer includes; forming a first electrode layer over the substrate and having a first composition and a first thickness; and forming a second electrode layer after forming the first electrode layer and having a second composition different from the first composition and having a second thickness greater than the first thickness; forming a patterned masking layer including a masking member and an opening, wherein; the masking member overlies a first region of the substrate; and the opening overlies a second region of the substrate; removing an upper portion of the gate electrode layer to form a lower portion of the gate electrode layer overlying the second region of the substrate that includes the first electrode layer and a remaining portion of the second electrode layer, wherein the lower portion of the gate electrode layer has a third thickness greater than the first thickness; performing a process operation other than removing substantially all of the lower portion of the gate electrode layer; and removing substantially all of the lower portion of the gate electrode layer overlying the second region of the substrate to form a gate electrode overlying the first region of the substrate, wherein removing substantially all of the lower portion of the gate electrode layer is performed after performing the process operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process of forming an electronic device comprising:
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forming a gate dielectric layer over a substrate; forming a gate electrode layer over the gate dielectric layer, wherein forming the gate electrode layer comprises; forming a metal-containing electrode layer on the gate dielectric layer; and forming a semiconductor layer over the metal-containing layer, wherein the semiconductor layer includes an end-point marker; forming a patterned masking layer, wherein an exposed portion of the gate electrode layer lies within an opening in the patterned masking layer; etching the exposed portion of the gate electrode layer, wherein etching the exposed portion of the gate electrode layer includes; exposing the end-point marker; detecting the exposed end-point marker; generating a control signal in response to detecting the exposed end-point marker; and ending etching the exposed portion of the gate electrode layer in response to the control signal; removing the patterned masking layer after etching the exposed portion of the gate electrode layer and before exposing the gate dielectric layer; and exposing a portion of the metal-containing electrode layer after removing the patterned masking layer; exposing a portion of the gate dielectric layer before forming another patterned masking layer, wherein exposing the portion of the gate dielectric layer is performed after exposing the portion of the metal-containing electrode layer. - View Dependent Claims (13, 14, 15)
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16. A process of forming an electronic device comprising:
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forming a gate dielectric layer over a substrate; forming a metal-containing layer on the gate dielectric layer, wherein the metal-containing layer has a first thickness; forming a semiconductor layer over the substrate after forming the metal-containing layer, wherein the semiconductor layer has a second thickness greater than the first thickness; forming a patterned masking layer including a masking member and an opening, wherein; the masking member overlies a first region of the substrate; and the opening overlies a second region of the substrate, and an exposed portion of the semiconductor layer lies between the opening and the substrate; removing most of the exposed portion of the semiconductor layer to form a remaining portion of the semiconductor layer overlying the second region of the substrate, wherein substantially all of the metal-containing layer remains covered by the semiconductor layer; removing the patterned masking layer; oxidizing the remaining portion of the semiconductor layer to form a surface layer, wherein oxidizing the semiconductor layer is performed using steam; introducing a dopant through the metal-containing layer and into the substrate; removing the surface layer; and removing remaining portions of the semiconductor layer and the metal-containing layer overlying the second region of the substrate to form a gate electrode over the first region of the substrate, wherein the gate electrode includes the metal-containing layer and the semiconductor layer. - View Dependent Claims (17, 18, 19, 20)
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Specification