Field-effect transistor and method for manufacturing the same
First Claim
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1. A method for manufacturing a field-effect transistor, comprising the steps of:
- forming a source electrode and a drain electrode each containing hydrogen or deuterium;
forming an oxide semiconductor layer;
causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
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Abstract
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
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Citations
14 Claims
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1. A method for manufacturing a field-effect transistor, comprising the steps of:
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forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer; causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A field-effect transistor comprising:
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an oxide semiconductor layer having a channel region between a source electrode and a drain electrode; a gate insulator; and a gate electrode, wherein the gate insulator is disposed between the gate electrode and the oxide semiconductor layer, and wherein a concentration of hydrogen or deuterium in regions in the oxide semiconductor layer in contact with the source electrode and the drain electrode is higher than a concentration of hydrogen or deuterium in the channel region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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Specification