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Field-effect transistor and method for manufacturing the same

  • US 7,737,438 B2
  • Filed: 07/03/2008
  • Issued: 06/15/2010
  • Est. Priority Date: 09/15/2006
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a field-effect transistor, comprising the steps of:

  • forming a source electrode and a drain electrode each containing hydrogen or deuterium;

    forming an oxide semiconductor layer;

    causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

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