Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
First Claim
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1. A multiple reflection layer electrode comprising:
- a reflection layer on a p-type semiconductor layer;
an APL (agglomeration protecting layer) on the reflection layer so as to retard agglomeration of the reflection layer; and
a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL;
a contact electrode layer between the p-type semiconductor layer and the reflection layer and reducing a contact resistance between the p-type semiconductor layer and the reflection layer.
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Abstract
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
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Citations
22 Claims
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1. A multiple reflection layer electrode comprising:
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a reflection layer on a p-type semiconductor layer; an APL (agglomeration protecting layer) on the reflection layer so as to retard agglomeration of the reflection layer; and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL;
a contact electrode layer between the p-type semiconductor layer and the reflection layer and reducing a contact resistance between the p-type semiconductor layer and the reflection layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification