Liquid crystal display device
First Claim
1. A liquid crystal display device comprising:
- a gate electrode;
a gate insulating film formed over the gate electrode;
a microcrystalline semiconductor film formed over the gate insulating film;
a buffer layer which is formed over the microcrystalline semiconductor film and has a concave portion;
source and drain regions formed over the buffer layer; and
source and drain electrodes in contact with the source and drain regions,wherein;
the source and drain electrodes are not overlapped with end portions of the microcrystalline semiconductor film and the source and drain regions; and
end portions of the source and drain regions which are overlapped with the gate electrode are aligned with side faces of the concave portion of the buffer layer.
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Accused Products
Abstract
A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
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Citations
26 Claims
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1. A liquid crystal display device comprising:
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a gate electrode; a gate insulating film formed over the gate electrode; a microcrystalline semiconductor film formed over the gate insulating film; a buffer layer which is formed over the microcrystalline semiconductor film and has a concave portion; source and drain regions formed over the buffer layer; and source and drain electrodes in contact with the source and drain regions, wherein; the source and drain electrodes are not overlapped with end portions of the microcrystalline semiconductor film and the source and drain regions; and end portions of the source and drain regions which are overlapped with the gate electrode are aligned with side faces of the concave portion of the buffer layer. - View Dependent Claims (2, 3, 4, 5)
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6. A liquid crystal display device comprising:
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a gate electrode; a gate insulating film formed over the gate electrode; a microcrystalline semiconductor film formed over the gate insulating film; a buffer layer which is formed over the microcrystalline semiconductor film and has a concave portion; source and drain regions formed over the buffer layer; and source and drain electrodes in contact with the source and drain regions, wherein; a part of the source and drain regions is in contact with the source and drain electrodes; the other part of the source and drain regions is not in contact with the source and drain electrodes; the buffer layer is exposed outside the source and drain electrodes; the source and drain electrodes are not overlapped with end portions of the microcrystalline semiconductor film and the source and drain regions; and end portions of the source and drain regions which are overlapped with the gate electrode are aligned with side faces of the concave portion of the buffer layer. - View Dependent Claims (7, 8, 9, 10)
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11. A liquid crystal display device comprising:
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a gate electrode; a gate insulating film formed over the gate electrode; a microcrystalline semiconductor film formed over the gate insulating film; a buffer layer which is formed over the microcrystalline semiconductor film and has a concave portion; source and drain regions formed over the buffer layer; source and drain electrodes in contact with the source and drain regions; an insulating film in contact with the source and drain electrodes, a part of the source and drain regions, and a part of the buffer layer; a pixel electrode formed over the insulating film and connected to one of the source and drain electrodes through a contact hole formed in the insulating film; and a liquid crystal adjacent to the pixel electrode; wherein; the source and drain electrodes are not overlapped with end portions of the microcrystalline semiconductor film and the source and drain regions; and end portions of the source and drain regions which are overlapped with the gate electrode are aligned with side faces of the concave portion of the buffer layer. - View Dependent Claims (12, 13, 14, 15)
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16. A liquid crystal display device comprising:
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a gate electrode; a gate insulating film formed over the gate electrode; a microcrystalline semiconductor film formed over the gate insulating film; a buffer layer which is formed over the microcrystalline semiconductor film and has a concave portion; source and drain regions formed over the buffer layer; source and drain electrodes in contact with the source and drain regions; an insulating film in contact with the source and drain electrodes, a part of the source and drain regions, and a part of the buffer layer; a pixel electrode formed over the insulating film and connected to one of the source and drain electrodes through a contact hole formed in the insulating film; and a liquid crystal adjacent to the pixel electrode; wherein; a part of the source and drain regions is in contact with the source and drain electrodes; the other part of the source and drain regions is not in contact with the source and drain electrodes; the buffer layer is exposed outside of the source and drain electrodes; and end portions of the source and drain regions which are formed over the gate electrode are aligned with side faces of the concave portion of the buffer layer. - View Dependent Claims (17, 18, 19, 20)
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21. A liquid crystal display device comprising:
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a gate electrode; a gate insulating film formed over the gate electrode; a microcrystalline semiconductor film formed over the gate insulating film; a buffer layer formed over the microcrystalline semiconductor film; source and drain regions formed over the buffer layer; and source and drain electrodes formed on the source and drain regions, wherein; the source and drain regions extend beyond outer side edges of the source and drain electrodes, a portion of the buffer layer between the source and drain regions is thinned, and the buffer layer extends beyond outer side edges of the source and drain regions. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification