Method of forming fine pattern, liquid crystal device having a fine pattern and fabricating method thereof
First Claim
Patent Images
1. A method of forming fine pattern, comprising:
- forming a photo-resist pattern on a conductive layer, the photo-resist pattern having a minimum line width corresponding to an exposure resolution of an exposure device; and
over-etching the conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device,wherein the step of over-etching the conductive layer performs etching so that a etching CD (Critical Dimension) bias between the photo-resist pattern and the electrode pattern is approximately 0.4˜
3 μ
m,wherein a temperature of the etching process is between about 50°
C. and about 70°
C., andwherein an etching process time is between about 100 seconds and about 300 seconds.
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Abstract
This invention relates to a method of forming fine pattern that is adaptive for forming a fine pattern without limit of an exposure resolution, a liquid crystal display device and a fabricating method. The method of forming fine pattern comprises forming a photo-resist pattern on a transparent conductive layer. The photo-resist pattern having a minimum line width corresponding to an exposure resolution of an exposure device. The method further comprises over-etching the transparent conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device.
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Citations
15 Claims
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1. A method of forming fine pattern, comprising:
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forming a photo-resist pattern on a conductive layer, the photo-resist pattern having a minimum line width corresponding to an exposure resolution of an exposure device; and over-etching the conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device, wherein the step of over-etching the conductive layer performs etching so that a etching CD (Critical Dimension) bias between the photo-resist pattern and the electrode pattern is approximately 0.4˜
3 μ
m,wherein a temperature of the etching process is between about 50°
C. and about 70°
C., andwherein an etching process time is between about 100 seconds and about 300 seconds. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a liquid crystal display device,
forming a conductive layer; -
forming a photo-resist pattern on the conductive layer, the photo-resist pattern including a portion having a minimum line width corresponding to an exposure resolution of an exposure device; and over-etching the conductive layer by an etching process using the photo-resist pattern as a mask to form an electrode pattern having a line width narrower than the exposure resolution of the exposure device, wherein the step of over-etching the conductive layer performs etching so that a etching CD (Critical Dimension) bias between the photo-resist pattern and the electrode pattern is an approximately 0.4˜
3 μ
m,wherein a temperature of the etching process is between about 50°
C. and about 70°
C., andwherein an etching process time is between about 100 seconds and about 300 seconds. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification