Methods and systems for inspection of a specimen using different inspection parameters

• US 7,738,089 B2
• Filed: 09/03/2004
• Issued: 06/15/2010
• Est. Priority Date: 09/04/2003
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Marella, Paul Frank, Ceglio, Nat, Lange, Steve R., Hwang, Shiow-Hwei, Fu, Tao-Yi
• Primary Examiner(s): Chowdhury; Tarifur R.
• Assistant Examiner(s): Akanbi; Isiaka O
• Application Number:
  US10/933,873
• Publication Number:
  US 20050052643A1
• Time in Patent Office: 2,111 Days
• Field of Search: 356/237.1, 3562372-2376, 365/225.5, 365/230.02, 370/464, 711/156
• US Class Current: 356/237.1
• CPC Class Codes: G01N 21/8806 Specially adapted optical and illumination features
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen.

Claims

1. A computer-implemented method, comprising:

determining optimal parameters for inspection of a specimen based on defects selected for detection on the specimen, wherein the optimal parameters result in a number of false defects detected during the inspection equal to or less than that which would be detected during the inspection using other parameters, wherein the optimal parameters result in fewer non-selected defects being detected during the inspection than that which would be detected during the inspection using the other parameters, wherein the selected defects have a defect type different than the defect type of the non-selected defects, and wherein the non-selected defects comprise defects other than false defects; and

setting parameters of an inspection system at the optimal parameters prior to the inspection of the specimen, wherein the inspection comprises scanning the specimen with the inspection system.

2. The method of claim 1, wherein the optimal parameters result in more of the selected defects being detected during the inspection than that which would be detected during the inspection using the other parameters.

3. The method of claim 1, wherein the defects are selected by a user.

4. The method of claim 1, wherein said setting is performed by a computer.

5. The method of claim 1, wherein the selected defects comprise relatively low contrast defects.

6. The method of claim 1, wherein said determining comprises performing one or more test inspections of the specimen with different parameters and identifying which of the different parameters produces the largest capture rate of the selected defects.

7. The method of claim 6, wherein said identifying comprises classifying defects detected during the one or more test inspections.

8. The method of claim 6, wherein said identifying comprises automatically classifying defects detected during the one or more test inspections.

9. The method of claim 6, wherein said determining further comprises determining which of the different parameters produces the largest capture rate of the selected defects without increasing the number of the false defects that are detected.

10. The method of claim 1, wherein said determining comprises performing one or more test inspections of a test specimen, known to have one or more of the selected defects, with different parameters and identifying which of the different parameters produces the largest capture rate of the selected defects.

11. The method of claim 1, wherein the specimen is a wafer or a reticle.

12. The method of claim 1, wherein the optimal parameters comprise illuminating the specimen with at least one wavelength below about 350 nm and at least one wavelength above about 350 nm.

13. The method of claim 1, wherein the optimal parameters comprise illumination of the specimen with at least one wavelength selected to increase contrast in signals for a material of the specimen and at least one wavelength selected to increase sensitivity to the selected defects.

14. The method of claim 1, wherein the inspection comprises collecting light from the specimen, detecting the collected light to produce optical phase signals representative of a first portion of the collected light and brightfield optical signals representative of a second portion of the collected light, and processing the optical phase signals and the brightfield optical signals separately to detect the selected defects on the specimen.

15. The method of claim 1, wherein the specimen is characterized by an opacity transition wavelength, and wherein the optimal parameters comprise a first optimal inspection wavelength band selected from wavelengths in an opaque regime defined by wavelengths shorter than the opacity transition wavelength and a second optimal inspection wavelength band selected from wavelengths in a transmissive regime defined by wavelengths longer than the opacity transition wavelength.

16. The method of claim 15, wherein the inspection comprises illuminating the specimen with selected wavelengths of light that comprise the first optimal inspection wavelength band, the second optimal inspection wavelength band, or both the first optimal inspection wavelength band and the second optimal inspection wavelength band.