Fuse data acquisition
First Claim
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1. A method of operating a memory device, the method comprising:
- detecting a signal indicating whether a voltage used during operation of at least one of a number of fuse circuits has reached a threshold level;
initializing at least one of the number of fuse circuits in response to detecting that the voltage has reached the threshold level; and
reading an output of at least one of the number of fuse circuits at least partially in response to a detected state change of an output of the at least one initialized fuse circuit.
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Abstract
One or more embodiments of the present disclosure provide methods, devices, and systems for operating memory devices having fuse circuits. One method embodiment includes detecting a signal indicating whether a voltage used during operation of at least one of a number of fuse circuits has reached a threshold level, initializing at least one of the number of fuse circuits in response to detecting that the voltage has reached the threshold level, and reading an output of at least one of the number of fuse circuits at least partially in response to a detected state change of an output of the at least one initialized fuse circuit.
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Citations
28 Claims
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1. A method of operating a memory device, the method comprising:
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detecting a signal indicating whether a voltage used during operation of at least one of a number of fuse circuits has reached a threshold level; initializing at least one of the number of fuse circuits in response to detecting that the voltage has reached the threshold level; and reading an output of at least one of the number of fuse circuits at least partially in response to a detected state change of an output of the at least one initialized fuse circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of operating a memory device having a number of fuse circuits, the method comprising:
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storing a data value in a memory cell of a fuse circuit by adjusting a threshold voltage (Vt) level of the cell to a first Vt level; storing the data value in a memory cell of at least one other fuse circuit by adjusting a Vt level of the cell of the at least one other fuse circuit to a second Vt level, the second Vt level greater in magnitude than the first Vt level; while a voltage used during operation of the device is ramping, providing a reset signal to the fuse circuit having the memory cell adjusted to the first Vt level at least partially in response to detecting that the voltage has reached a threshold level, wherein, an output of a latch of the fuse circuit having the memory cell adjusted to the first Vt level is reset to a reset data value; initiating a transfer of the stored data value from the memory cell adjusted to the first Vt level to the latch and initiating a transfer of the stored data value from the memory cell of the at least one other fuse circuit having the memory cell adjusted to the second Vt level to an other latch; detecting when the output of the latch of the fuse circuit having the memory cell adjusted to the first Vt level changes from the reset data value to the stored data value; and reading an output of the an other latch of the at least one other fuse circuit having the memory cell adjusted to the second Vt level after detecting the output change of the latch of the fuse circuit having the memory cell adjusted to the first Vt level. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A memory device, comprising:
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an array of memory cells; a number of fuse circuits programmed to store data associated with operating the array; and control circuitry coupled to the array and configured to; initialize an output of at least one fuse circuit of the number of fuse circuits to a reset data value at least partially in response to detecting that a supply voltage has reached a threshold level; detect when the output of the at least one initialized fuse circuit changes from the reset data value to a data value stored by a memory cell of the at least one initialized fuse circuit; and retrieve data from an output of at least an other one of the number of fuse circuits at least partially in response to the detected output change. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A fuse circuit of a memory device, the fuse circuit comprising:
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a memory cell having a first threshold voltage (Vt) level corresponding to a stored data value; a latch to which the stored data value is transferred when a read voltage sufficient to place the memory cell in a conductive state is applied to a control gate of the memory cell; and wherein the first Vt level is lesser in magnitude than a second Vt level to which a memory cell of a number of other fuse circuits of the device are adjusted, and wherein data values stored by the number of other fuse circuits are retrieved during power up of the device after control circuitry of the device; resets an output of the latch to a reset value different than the stored data value in response to a voltage used during operation of at least one the fuse circuits reaching a threshold value; and detects a change of the output of the latch from the reset value to the stored data value.
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Specification