Inverted LED structure with improved light extraction
First Claim
1. A method of fabricating a light emitting device comprising:
- providing a substrate having a first surface and a second surface that are substantially parallel to one another;
fabricating a light emitting structure on said first surface, said light emitting structure comprising;
a first layer of semiconductor material of a first conductivity type deposited on said substrate;
an active layer overlying said first layer; and
a second layer of semiconductor material of an opposite conductivity type from said first conductivity type overlying said active layer; and
etching said second surface of said substrate to provide a curved, convex surface with respect to said first surface, wherein said substrate comprises sapphire or silicon carbide.
3 Assignments
0 Petitions
Accused Products
Abstract
A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.
-
Citations
3 Claims
-
1. A method of fabricating a light emitting device comprising:
-
providing a substrate having a first surface and a second surface that are substantially parallel to one another; fabricating a light emitting structure on said first surface, said light emitting structure comprising; a first layer of semiconductor material of a first conductivity type deposited on said substrate; an active layer overlying said first layer; and a second layer of semiconductor material of an opposite conductivity type from said first conductivity type overlying said active layer; and etching said second surface of said substrate to provide a curved, convex surface with respect to said first surface, wherein said substrate comprises sapphire or silicon carbide. - View Dependent Claims (3)
-
-
2. A method of fabricating a light emitting device comprising
providing a substrate having a first surface and a second surface that are substantially parallel to one another; -
fabricating a light emitting structure on said first surface, said light emitting structure comprising; a first layer of semiconductor material of a first conductivity type deposited on said substrate; an active layer overlying said first layer; and a second layer of semiconductor material of an opposite conductivity type from said first conductivity type overlying said active layer; and etching said second surface of said substrate to provide a curved, convex surface with respect to said first surface, wherein etching said second surface of said substrate comprises; depositing a layer of photoresist on said second surface; patterning said deposited photoresist layer; heating said photoresist to a temperature at which a surface of said photoresist layer assumes a curved convex shape; and etching said photoresist layer and said substrate.
-
Specification