Plasma treatment between deposition processes
First Claim
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1. A method of forming a thin film solar cell, comprising:
- transferring a substrate into a plasma enhanced chemical vapor deposition chamber;
depositing an n-doped amorphous silicon layer over the substrate;
providing a plasma treatment to the n-doped amorphous silicon layer disposed on the substrate;
depositing an n-doped microcrystalline silicon layer over the n-doped amorphous silicon layer;
removing the substrate from the chamber; and
forming a p-i-n junction over the n-doped microcrystalline silicon layer, wherein forming the p-i-n junction comprises;
depositing a p-doped microcrystalline silicon layer over the n-doped microcrystalline silicon layer;
depositing an n-doped amorphous silicon layer over the p-doped silicon layer; and
depositing an intrinsic microcrystalline silicon layer between the p-doped microcrystalline silicon layer and the n-doped amorphous silicon layer.
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Abstract
Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.
190 Citations
15 Claims
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1. A method of forming a thin film solar cell, comprising:
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transferring a substrate into a plasma enhanced chemical vapor deposition chamber; depositing an n-doped amorphous silicon layer over the substrate; providing a plasma treatment to the n-doped amorphous silicon layer disposed on the substrate; depositing an n-doped microcrystalline silicon layer over the n-doped amorphous silicon layer; removing the substrate from the chamber; and forming a p-i-n junction over the n-doped microcrystalline silicon layer, wherein forming the p-i-n junction comprises; depositing a p-doped microcrystalline silicon layer over the n-doped microcrystalline silicon layer; depositing an n-doped amorphous silicon layer over the p-doped silicon layer; and depositing an intrinsic microcrystalline silicon layer between the p-doped microcrystalline silicon layer and the n-doped amorphous silicon layer. - View Dependent Claims (2, 3, 4, 12, 14)
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5. A method of forming a thin film solar cell, comprising:
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transferring a substrate into a first plasma enhanced chemical vapor deposition chamber disposed in a first system; depositing a p-doped silicon layer over a surface of the substrate in the first plasma enhanced chemical vapor deposition chamber; transferring a substrate from the first plasma enhanced chemical vapor deposition chamber into a second plasma enhanced chemical vapor deposition chamber disposed in the first system; depositing an intrinsic amorphous silicon layer in the second plasma enhanced chemical vapor deposition chamber over the p-doped silicon layer; depositing an n-doped amorphous silicon layer over the intrinsic amorphous silicon layer; exposing the n-doped amorphous silicon layer to a plasma treatment; depositing an n-doped microcrystalline silicon layer over the n-doped amorphous silicon layer; removing the substrate from the second plasma enhanced chemical vapor deposition chamber; and forming a p-i-n junction over the n-doped microcrystalline silicon layer, wherein forming the p-i-n junction comprises; depositing a p-doped microcrystalline silicon layer over the n-doped microcrystalline silicon layer; depositing an n-doped amorphous silicon layer over the p-doped silicon layer; and depositing an intrinsic microcrystalline silicon layer between the p-doped microcrystalline silicon layer and the n-doped amorphous silicon layer. - View Dependent Claims (6, 7, 13, 15)
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8. A method of forming a thin film solar cell, comprising:
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depositing an amorphous silicon layer over a surface of a transparent substrate; providing a plasma treatment to the amorphous silicon layer disposed on the transparent substrate; depositing an microcrystalline silicon layer over the amorphous silicon layer; and forming a p-i-n junction over the microcrystalline silicon layer, wherein forming the p-i-n junction comprises; depositing a p-doped microcrystalline silicon layer over the n-doped microcrystalline silicon layer; depositing an n-doped amorphous silicon layer over the p-doped silicon layer; and depositing an intrinsic microcrystalline silicon layer between the p-doped microcrystalline silicon layer and the n-doped amorphous silicon layer. - View Dependent Claims (9, 10, 11)
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