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Metal line of semiconductor device and method for forming the same

  • US 7,741,216 B2
  • Filed: 12/02/2008
  • Issued: 06/22/2010
  • Est. Priority Date: 01/02/2008
  • Status: Expired due to Fees
First Claim
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1. A metal line of a semiconductor device, comprising:

  • an insulation layer formed on a semiconductor substrate and having a metal line forming region;

    a diffusion barrier formed on a surface of the metal line forming region of the insulation layer and having a multi-layered structure comprising a V layer, a VxNy layer and a VxNyOz layer, wherein the V layer, the VxNy layer and the VxNyOz layer are formed on a surface of the insulation layer in sequence; and

    a metal layer formed on the diffusion barrier in the metal line forming region of the insulation layer.

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