Semiconductor component and method for fabricating it

• US 7,741,675 B2
• Filed: 02/23/2006
• Issued: 06/22/2010
• Est. Priority Date: 02/23/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz
• Primary Examiner(s): Nguyen; Cuong Q
• Assistant Examiner(s): Tran; Trang Q
• Application Number:
  US11/361,045
• Publication Number:
  US 20060209586A1
• Time in Patent Office: 1,580 Days
• Field of Search: 257328-336, 257/E29.201, 365/149
• US Class Current: 257/330
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor component has a semiconductor body in which a trench structure is provided. An electrode structure embedded in the trench structure is at least partly insulated from its surroundings by an insulation structure, and is contact-connected in a contact-connecting region via a contact hole that penetrates through an upper region of the insulation structure. The semiconductor component has at least two trenches running next to one another, at least one of said trenches containing a part of the electrode structure. The trenches are oriented so that at least the regions of the insulation structure which are provided in the upper region of the trenches overlap one another in an overlap region. The contact hole is arranged above the at least two trenches in such a way that at least parts of the overlap region and at least one of the electrode structure parts are contact-connected via the contact hole.

Claims

1. A semiconductor component comprising:

semiconductor body including a trench structure embedded in a top surface of said semiconductor body, the trench structure including at least two trench regions disposed adjacent to each other and oriented perpendicular to said top surface, at least one trench region of said at least two trench regions including at least a part of an electrode structure, said electrode structure being embedded in the trench structure and at least partly insulated from surroundings of the electrode structure by an insulating structure,

wherein the at least two trench regions have approximately the same dimensions as cell array trenches of the semiconductor component;

wherein the two trench regions are oriented relative to one another in such a way that at least upper regions of said two trench regions and at least a portion of the insulating structure overlap one another in an overlap region, said portion of said insulating structure being provided in the upper region of the two trench regions; and

wherein a contact hole is arranged above the at least two trench regions in such a way that at least parts of the overlap region and at least said part of the electrode structure are physically and electrically connect via the contact hole.

2. The semiconductor component as claimed in claim 1, wherein the contact hole is arranged in such a way that at least two parts of said electrode structure are situated in different trench regions of the at least two trench regions.

3. The semiconductor component as claimed in claim 1, wherein distances between the two trench regions, dimensions of the two trench regions and also the insulating structure are configured in such a way that the two trench regions form a common trench.

6. The trench transistor of claim 1, wherein the at least two trench regions includes first and second trench regions, and wherein the first trench region includes at a bottom thereof an ascending wall portion that intersects with an ascending wall portion of the second trench region.

7. The trench transistor of claim 2, wherein the portion of the insulating structure extends in an elongated manner toward the top surface of the semiconductor body between said at least two parts of the electrode structure located within said at least two adjacent trench regions.

4. A trench transistor having a semiconductor body, the trench transistor comprising:

at least two trenches which are embedded in a top surface of said semiconductor body and adjacent each other in a contact-connecting region of the semiconductor body, each trench being oriented perpendicular to said top surface and including;

an electrode structure; and

an insulation structure configured to at least partly insulate the electrode structure from surrounding areas; and

a contact hole formed above the at least two trenches in the contact-connecting region;

wherein said at least two trenches have approximately the same dimensions as cell array trenches of the trench transistor;

wherein upper portions of said at least two trenches and portions of the insulation structures of the at least two trenches are merged to form an insulation structure overlap region; and

wherein the contact hole is configured to physically and electrically connect the electrode structures of the at least two trenches and at least a part of the insulation structure overlap region.

5. The trench transistor as claimed in claim 4, wherein the contact hole is arranged centrally with respect to the insulation structure overlap region such that the contact hole makes contact substantially equally with each of the electrode structures of the at least two trenches.