Post last wiring level inductor using patterned plate process
First Claim
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1. A semiconductor structure, comprising:
- a substrate having a metal wiring level within the substrate;
a capping layer on and above a top surface of the substrate;
a photo-imagable layer on and above a top surface of the capping layer, wherein the photo-imagable layer consists of a photo-imagable material;
an inductor comprising a first portion in and above the photo-imagable layer and a second portion only above the photo-imagable layer, wherein a bottom surface of the photo-imagable layer is in direct mechanical contact with the top surface of the capping layer, and wherein a top surface of the photo-imagable layer is in direct mechanical contact with a bottom surface of the second portion of the inductor; and
a wire bond pad, wherein a first portion of the wire bond pad is within the photo-imagable layer, wherein a second portion of the wire bond pad is above the photo-imagable layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the photo-imagable layer, wherein a second direction is orthogonal to the first direction, wherein a top surface of the first part of the first portion of the inductor and a top surface of the second portion of the inductor are coplanar, and wherein a height of the first part of the first portion of the inductor in the first direction is equal to a height of the second portion of the inductor in the first direction.
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Abstract
A semiconductor structure. The semiconductor structure includes: a substrate having a metal wiring level within the substrate; a capping layer on and above a top surface of the substrate; an insulative layer on and above a top surface of the capping layer; an inductor comprising a first portion in and above the insulative layer and a second portion only above the insulative layer; and a wire bond pad within the insulative layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the insulative layer.
38 Citations
10 Claims
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1. A semiconductor structure, comprising:
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a substrate having a metal wiring level within the substrate; a capping layer on and above a top surface of the substrate; a photo-imagable layer on and above a top surface of the capping layer, wherein the photo-imagable layer consists of a photo-imagable material; an inductor comprising a first portion in and above the photo-imagable layer and a second portion only above the photo-imagable layer, wherein a bottom surface of the photo-imagable layer is in direct mechanical contact with the top surface of the capping layer, and wherein a top surface of the photo-imagable layer is in direct mechanical contact with a bottom surface of the second portion of the inductor; and a wire bond pad, wherein a first portion of the wire bond pad is within the photo-imagable layer, wherein a second portion of the wire bond pad is above the photo-imagable layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the photo-imagable layer, wherein a second direction is orthogonal to the first direction, wherein a top surface of the first part of the first portion of the inductor and a top surface of the second portion of the inductor are coplanar, and wherein a height of the first part of the first portion of the inductor in the first direction is equal to a height of the second portion of the inductor in the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification